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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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Part No. |
AT-38086-TR1 AT-38086-BLK AT-38086
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OCR Text |
pulsed (pulse width = 577 sec, duty cycle = 12.5%)/cw Operation * +28 dBm pulsed Pout @ 900 MHz, Typ. * +23.5 dBm cw Pout @ 836.5 MHz, Typ. * 60% pulsed Collector Efficiency @ 900 MHz, Typ. * 11 dB pulsed Power Gain @ 900 MHz, Typ. * -35 dB... |
Description |
4.8 V NPN Silicon Bipolar Common Emitter Transistor
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File Size |
117.39K /
10 Page |
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![MRFE6VP5600HR611 MRFE6VP5600HR5](Maker_logo/freescale_semiconductor_inc.GIF)
Freescale Semiconductor, Inc
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Part No. |
MRFE6VP5600HR611 MRFE6VP5600HR5
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OCR Text |
...(mhz) g ps (db) d (%) irl (db) pulsed (100 sec, 20% duty cycle) 600 peak 230 25.0 74.6 -- 1 8 cw 600 avg. 230 24.6 75.2 -- 1 7 ? capable of handling a load mismatch of 65:1 vswr, @ 50 vdc, 230 mhz, at all phase angles, designed for enhanc... |
Description |
RF Power Field Effect Transistors 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
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File Size |
928.34K /
13 Page |
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NXP Semiconductors N.V.
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Part No. |
BLF7G24L-140 BLF7G24LS-140
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OCR Text |
...-140 power ldmos transistor 7.3 pulsed cw v ds = 28 v; i dq = 1300 ma. (1) f = 2300 mhz (2) f = 2400 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2300 mhz (2) f = 2400 mhz fig 7. pulsed cw power gain as a function of load power; typical ... |
Description |
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF7G24LS-140<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G24LS-140<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; Power LDMOS transistor BLF7G24LS-140<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G24LS-140<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
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File Size |
119.79K /
14 Page |
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Bookly
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Part No. |
BM01N60
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OCR Text |
...ous (TC = 100C) Drain Current - pulsed
(Note 1)
BM01N60 600 1.0 0.63 4.0 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A...cw cw cw
* When mounted on the minimum pad size recommended (PCB Mount)
BM01N60
Electrical ... |
Description |
MOSFET
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File Size |
814.96K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQI1N60 FQB1N60 FQB1N60TM
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OCR Text |
...ous (TC = 100C) Drain Current - pulsed
(Note 1)
FQB1N60 / FQI1N60 600 1.2 0.76 4.8 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A ...cw cw cw
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2000 Fairchild Semi... |
Description |
600V N-Channel QFET 600V N-Channel MOSFET
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File Size |
543.53K /
9 Page |
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it Online |
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Peregrine Semiconductor
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Part No. |
PE42423
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OCR Text |
... dbm dbm dbm rf input power, pulsed 1 0.1?0.6 ghz 0.6?4.0 ghz 4.0?6.0 ghz p max,pulsed 32 fig. 4 fig. 4 dbm dbm ...cw p max,term 26 dbm notes: 1. human body model (mil-std 883 method 3015) 2. mach... |
Description |
UltraCMOS SPDT RF Switch 100 MHz - 6 GHz
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File Size |
452.98K /
11 Page |
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Peregrine Semiconductor
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Part No. |
PE42521
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OCR Text |
...ctrl 10 a rf input power, pulsed (rfc-rfx) 4 9 khz 600 mhz 600 mhz 13 ghz p in-pulsed fig. 4 fig. 5 dbm dbm rf input power, hot switch, cw 3 9 khz 10 mhz 10 mhz 13 ghz p in-hot fi... |
Description |
UltraCMOS SPDT RF Switch 9 kHz - 13 GHz
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File Size |
554.82K /
16 Page |
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Peregrine Semiconductor
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Part No. |
PE42520MLBA-Z EK42520-02
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OCR Text |
...ctrl 10 a rf input power, pulsed (rfc-rfx) 4 9 khz 10 mhz 10 mhz 13 ghz p in-pulsed fig. 4 fig. 5 dbm dbm rf input power, hot switch, cw 3 9 khz 300 khz 300 khz 13 ghz p in-hot ... |
Description |
UltraCMOS SPDT RF Switch 9 kHz - 13 GHz
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File Size |
555.06K /
16 Page |
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it Online |
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Price and Availability
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