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				Mitsubishi Electric Corporation
Part No.	CM800E2Z-66H
OCR Text	PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE . ation nge. p...charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector...
Description	High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
File Size	52.87K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHLA770Z4
OCR Text	... 16 0.8 0.06 10.2 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns C 300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typic...Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off D...
Description	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK
File Size	221.07K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNA7Z60 IRHNA8Z60
OCR Text	.... Additionally, under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical elect...Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off D...
Description	30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体
File Size	127.16K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB7Z60 IRHNB8Z60
OCR Text	.... Additionally, under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical elect...Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off D...
Description	30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
File Size	110.79K / 8 Page	View it Online	Download Datasheet

For pre-charge Found Datasheets File :: 6176 Search Time::1.547ms
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