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For overlaytm Found Datasheets File :: 347 Search Time::1.031ms
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				TE Connectivity, Ltd. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	IRF634 IRF634FP
OCR Text	overlaytm MOSFET TYPE IRF634 IRF634FP s s s VDSS 250 V 250 V RDS(on) < 0.45 < 0.45 ID 8A 8A TYPICAL RDS(on) = 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 2 1 2 3 DESCRIPTION Using the latest high vol...
Description	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密 N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
File Size	332.26K / 9 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	IRF630S 6059
OCR Text	overlaytm MOSFET TYPE IRF630S s s s s s s V DSS 200 V R DS(on) < 0.40 ID 9A TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOL...
Description	From old datasheet system N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
File Size	84.11K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD7NS20 STD7NS20-1 STD7NS20T4
OCR Text	overlaytm MOSFET PRELIMINARY DATA TYPE STD7NS20 STD7NS20-1 s s s s s VDSS 200 V 200 V RDS(on) < 0.40 < 0.40 ID 7A 7A 3 1 2 1 3 TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSI...
Description	N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK MESH OVERLAY MOSFET N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY MOSFET N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY?/a> MOSFET
File Size	318.62K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics ST Microelectronics
Part No.	STD2NC60 STD2NC60-1 STD2NC60T4
OCR Text	...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description	N-CHANNEL 600V 3.3 OHM 2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 600V 3.3 OHM 2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh?II MOSFET N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMeshII MOSFET N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh⑩II MOSFET N-CHANNEL MOSFET
File Size	282.05K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD2NC70Z STD2NC70Z-1
OCR Text	...ON The third generation of MESH overlaytm Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability ...
Description	N-CHANNEL MOSFET N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH?III MOSFET
File Size	446.05K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD7NB20 STD7NB20-1
OCR Text	...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge terminatio...
Description	N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH?/a> MOSFET N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH MOSFET N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH⑩ MOSFET
File Size	486.60K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD2NC50 STD2NC50-1 STD2NC50T4
OCR Text	...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description	N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMeshII MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh?II MOSFET
File Size	442.76K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	STN1HNC60
OCR Text	...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description	N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
File Size	259.54K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STN1NB80
OCR Text	...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description	N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET
File Size	86.14K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STN1NC60
OCR Text	...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description	N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh?II MOSFET N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMeshII MOSFET N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh⑩II MOSFET
File Size	254.79K / 8 Page	View it Online	Download Datasheet

For overlaytm Found Datasheets File :: 347 Search Time::1.031ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |