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    MBR160RL

ON Semiconductor
Part No. MBR160RL
OCR Text ...se current ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction ? these devices are manufactured with a pb?free external lead finish only* mechanical characteristics ? c...
Description 1A 60V Schottky Rectifier

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    MBR160

ON Semiconductor
Part No. MBR160
OCR Text ...se current ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction ? these are pb?free devices* mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approx...
Description (MBR150 / MBR160) Axial Lead Rectifiers

File Size 90.19K  /  5 Page

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    IS31BL3506A

Integrated Silicon Solution, Inc
Part No. IS31BL3506A
OCR Text ...v rating is sufficient for the majority of applications. inductor value the choice of the inductor value will affect the performance of the device. large value inductors will reduce the current ripple in the inductor, thus reducing ou...
Description 1.0MHZ BOOST CONVERTER WITH 35V INTERNAL MOSFET SWITCH

File Size 397.87K  /  13 Page

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    IXYS, Corp.
Part No. DGSK40-025A
OCR Text ...tics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers...
Description Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB

File Size 63.56K  /  2 Page

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    SML11GB15U2C

Seme LAB
Part No. SML11GB15U2C
OCR Text ...as schottky didoe conduction by majority + minority carriers by majority carriers only forward characteristics v f (i f )v f (i f ), see fig 1 turn off characteristics extraction of excess carriers reverse current charges causes temperatur...
Description COMMON CATHODE SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

File Size 62.25K  /  2 Page

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    IXYS, Corp.
Part No. DGSK20-025A
OCR Text ...tics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers...
Description 12 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB PLASTIC PACKAGE-3

File Size 70.16K  /  3 Page

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    IXYS, Corp.
Part No. DGSK20-018A
OCR Text ...tics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers...
Description 15 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB PLASTIC PACKAGE-3

File Size 60.43K  /  2 Page

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    IXYS, Corp.
Part No. DGS3-018AS
OCR Text ...tics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers...
Description 7 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-2

File Size 49.51K  /  2 Page

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