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Samsung Electronic
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| Part No. |
KBE00S003M KBE00S003M-D411
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| OCR Text |
...gining of dat a. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cy cles by providing ...contact to the memory marketing team in samsung electr onics when considering the use of a product c... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,809.86K /
86 Page |
 View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S009M-D411 KBE00S009M-D4110
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| OCR Text |
...gining of dat a. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cy cles by providing ...contact to the memory marketing team in samsung electr onics when considering the use of a product c... |
| Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137
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| File Size |
1,908.72K /
86 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S003M
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| OCR Text |
...gining of dat a. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cy cles by providing ...contact to the memory marketing team in samsung electr onics when considering the use of a product c... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,819.19K /
86 Page |
View
it Online |
Download Datasheet |
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Analog Devices, Inc.
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| Part No. |
ADSP-21160NCB-TBD ADSP-21160NKB-95 ADSP-21160N
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| OCR Text |
...is efficient at executing math-intensive dsp algorithms. entering simd mode also has an effect on the way data is transferred between mem...contact analog devices at 800/262-5643 adsp-21160n april 2002 preliminary technical data with the ad... |
| Description |
ADSP-21160N High Performance 32-Bit SHARC DSP
DSP Microcomputer 64-BIT, 47.5 MHz, OTHER DSP, PBGA400
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 无电容，NMOS管，150mA的低压差稳压器的反向电流保护
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| File Size |
547.84K /
53 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00F005A-D411
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| OCR Text |
...gining of data. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cycles by providing e...contact to the memory marketing team in samsung electronics when considering the use of a product co... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,363.49K /
87 Page |
View
it Online |
Download Datasheet |
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|
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Samsung Electronic
|
| Part No. |
KBE00F005A-D411
|
| OCR Text |
...gining of data. even the write-intensive systems can take advantage of the extended reliability of 100k program/erase cycles by providing e...contact to the memory marketing team in samsung electronics when considering the use of a product co... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,354.35K /
87 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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