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  il-g Datasheet PDF File

For il-g Found Datasheets File :: 34282    Search Time::1.704ms    
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    Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z040

STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
Part No. Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z0409MF1AA2 Z0409SF Z0409SF0AA2 Z0409SF1AA2 Z0410MF Z0410MF0AA2 Z0410MF1AA2 Z0402MF0AA2 Z0402NF0AA2 Z0402SF0AA2 Z0402MF0 Z0409NF Z0409NF1AA2 Z0409NF0AA2 Z0402SF Z0402SF1AA2 Z0402NF1AA2 Z0410NF0AA2 Z0402MF1AA2 Z0410 Z0410NF1AA2 Z0410SF1AA2 Z0410SF0AA2
OCR Text ...drant 02 IGT (1) VGT VGD IH (2) IL dV/dt (2) (dV/dt)c (2) VD = 12 V VD = VDRM IT = 50 mA IG = 1.2 IGT I - III - IV II VD = 67 %VDRM gate ope...g 0.8 g Base quantity 50 250 Packing mode Tube Bulk 3/6 Z04 Series Fig. 1: Maximum po...
Description 4A TRIACS
From old datasheet system
Triacs, 4A, 700V, sensitivity 25mA
Triacs, 4A, 600V, sensitivity 25mA

File Size 54.45K  /  6 Page

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    2SK3022

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SK3022
OCR Text ...ion W C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source O...
Description Silicon N-Channel Power F-MOS FET 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 23.26K  /  1 Page

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    2SK3023

Panasonic Semiconductor
Part No. 2SK3023
OCR Text ...ion W C C S G D L = 0.1mH, IL = 10A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ...
Description Silicon N-Channel Power F-MOS FET

File Size 23.25K  /  1 Page

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    2SK3024 2SK3024TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3024 2SK3024TENTATIVE
OCR Text ...ion W C C S G D L = 0.1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ...
Description Silicon N-Channel Power F-MOS FET

File Size 23.22K  /  1 Page

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    2SK3025 2SK3025TENTATIVE

PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SK3025 2SK3025TENTATIVE
OCR Text ...ion W C C S G D L = 0.1mH, IL = 30A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
Silicon N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.15K  /  1 Page

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    2SK3026

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3026
OCR Text ...ion W C C S G D L = 0.1mH, IL = 40A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ...
Description Silicon N-Channel Power F-MOS FET

File Size 23.46K  /  1 Page

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    2SK3027

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3027
OCR Text ...ion W C C S G D L = 0.1mH, IL = 50A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ...
Description Silicon N-Channel Power F-MOS FET

File Size 23.49K  /  1 Page

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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text ...ion W C C S G D L = 0.1mH, IL = 100A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source...
Description Silicon N-Channel Power F-MOS FET

File Size 24.42K  /  1 Page

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    2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE
OCR Text ...ion W C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source O...
Description Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.26K  /  1 Page

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    74ACT00 74ACT00B 74ACT00M 74ACT00MTR 74ACT00TTR 4815

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. 74ACT00 74ACT00B 74ACT00M 74ACT00MTR 74ACT00TTR 4815
OCR Text ...5.5 5.5 5.5 V I (*) = V IH or V IL VO = 0.1 V or VCC - 0.1 V VO = 0.1 V or VCC - 0.1 V VI = V IH or V IL (*) Test Con dition s Min. 2.0 ...G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0....
Description QUAD 2-INPUT NAND GATE 输入与非
AC 48C 48#16 SKT RECP
From old datasheet system

File Size 66.08K  /  7 Page

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For il-g Found Datasheets File :: 34282    Search Time::1.704ms    
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