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  igbts Datasheet PDF File

For igbts Found Datasheets File :: 4028    Search Time::1.75ms    
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    STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD

STMICROELECTRONICS[STMicroelectronics]
Part No. STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD
OCR Text ... designed an advanced family of igbts, the PowerMESHTM igbts, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) m...
Description N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

File Size 433.36K  /  15 Page

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    STGW39NC60VD STGW39NC60VD06 GW39NC60VD

STMICROELECTRONICS[STMicroelectronics]
Part No. STGW39NC60VD STGW39NC60VD06 GW39NC60VD
OCR Text ... designed an advanced family of igbts, the PowerMESHTM igbts, with outstanding performances. The suffix "V" identifies a familyoptimized for high frequency application. Internal schematic diagram Applications High frequency inv...
Description N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

File Size 262.44K  /  13 Page

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    PS11035

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. PS11035
OCR Text ...EM CONTROL FUNCTIONS: * P-Side igbts : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and under voltage (UV) protection. * N-Side igbts : Drive circuit, DC-Link current sense...
Description Application Specific IPM Modules: 600V
Acoustic noise-less 1.5kW/200V AC Class 3 phase inverters, motor control applications, and motors with built-in small size inverter package

File Size 110.53K  /  5 Page

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    PS21265-P-AP 21265-P/AP

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. PS21265-P-AP 21265-P/AP
OCR Text ...CTIONS * * * * * For upper-leg igbts :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg igbts : Drive circuit, Control supply under-voltage protection (UV), Short circuit pro...
Description AC100V~200V three-phase inverter drive for small power motor control.

File Size 174.47K  /  10 Page

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    PS21267-P-AP PS21267-P_AP PS21267-P/AP

Mitsubishi Electric Semiconductor
Part No. PS21267-P-AP PS21267-P_AP PS21267-P/AP
OCR Text ...CTIONS * * * * * For upper-leg igbts :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg igbts : Drive circuit, Control supply under-voltage protection (UV), Short circuit pro...
Description AC100V~200V three-phase inverter drive for small power motor control.

File Size 174.49K  /  10 Page

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    IRG4BC20FD-SPBF

International Rectifier
Part No. IRG4BC20FD-SPBF
OCR Text ...kage * Lead-Free * Generation 4 igbts offer highest efficiencies available * igbts optimized for specific application conditions * HEXFRED diodes optimized for performance with igbts . Minimized recovery characteristics require less/no snub...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

File Size 291.64K  /  12 Page

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    IRG4BC20FDPBF IRG4BC20FDPBF-15

International Rectifier
Part No. IRG4BC20FDPBF IRG4BC20FDPBF-15
OCR Text ... 100C TJ TSTG Generation -4 igbts offer highest efficiencies available igbts optimized for specific application conditions HEXFRED diodes optimized for performance with igbts. Minimized recovery characteristics require less/no snubbin...
Description OPTIMIZED FOR MEDIUM OPERATING
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

File Size 308.44K  /  11 Page

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    IXGH25N100AU1 IXGH25N100U1

IXYS Corporation
Part No. IXGH25N100AU1 IXGH25N100U1
OCR Text ...d dimensions. IXYS MOSFETS and igbts are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N1...
Description High speed IGBT with Diode

File Size 309.56K  /  6 Page

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    VLA504-01

Powerex Power Semiconductors
Part No. VLA504-01
OCR Text ... diode (d1) is connected to the igbts collector to moni - tor the collector to emitter voltage. when the igbt is in the off state, v ce is high and d1 is reverse biased. with d1 off the (+) input of the comparator is ...
Description Hybrid IC IGBT Gate Driver

File Size 482.97K  /  6 Page

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