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  gate-commutated Datasheet PDF File

For gate-commutated Found Datasheets File :: 737    Search Time::4.609ms    
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    Digitron Semiconductors
Part No. ID101 ID100 ID103 ID105 ID106 ID102
OCR Text ... i tsm up to 30 amps peak gate current i gm 250 ma average gate current i g(av) 25 ma reverse gate voltage v gr 6 volts st...commutated turn-off time (id100-id104) - 8.0 - s i t = i r = 1a, r gk = 1k ? circuit com...
Description SILICON CONTROLLED RECTIFIER

File Size 144.53K  /  4 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. BTY79 BTY79-1000R BTY79-400R BTY79-500R BTY79-600R BTY79-800R
OCR Text ...o it - 30 a; dlg/dt = 0,25 a/ms gate to cathode average power dissipation (averaged over any 20 ms period) peak power dissipation temperatur...commutated turn-off time when switched from i y = 40 a to vr > 50 v with -dl-r/dt = 10 a/ms; dvd/dt ...
Description Average on-state current

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
Part No. TIC106 TIC106B TIC106M TIC106C TIC106D TIC106E TIC106Y
OCR Text ...rent (see note 4) peak positive gate current (pulse duration < 300 ps) peak gate power dissipation (pulse duration < 300 ps) average gate po...commutated tq tum-off time test conditions vaa = 30 v. rl = s a. rgkiott i = 6 kc. v|na50v, sea figu...
Description P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
Thyristor SCR 400V 30A 3-Pin(3 Tab) TO-220

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    New Jersey Semi-Conduct...
Part No. C148PA
OCR Text ...ate current, repetitive average gate power dissipation, pq(av) storage temperature, tstg operating temperature, tj stud torque 63 amperes 70...commutated turn-off time c148 - 30 chs - 40 chs - 30 chs - 40 conventional circuit commutated turn-o...
Description HIGH SPEED Silicon Controlled Rectifier

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    Eupec Power Semiconductors
Part No. T308F
OCR Text ...eshold voltage slope resistance gate trigger current gate trigger voltage gate non-trigger current holding current latching current forward ...commutated turn-off time t, = t, max, iT = 1000 A VT vT(T0) IT IGT VGT IGD VGD IH IL ...
Description N/A

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    MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1
OCR Text ...hannel Enhancement Mode Silicon Gate TMOS E-FETt SOT-223 for Surface Mount This advanced E-FET is a TMOS medium power MOSFET designed to wi...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS

File Size 176.21K  /  10 Page

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    BT169D BT169DW BT169BW BT169GW BT169W BT169EW BT169

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT169D BT169DW BT169BW BT169GW BT169W BT169EW BT169
OCR Text gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applica...commutated turn-off time CONDITIONS VDM =67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1k ...
Description Thyristors logic level(可控硅逻辑电平) 1 A, 600 V, SCR
Thyristor logic level

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    PCR406 PCR406-5 PCR406-6

UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
Part No. PCR406 PCR406-5 PCR406-6
OCR Text ... 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS Repetitive Peak Off-State Voltage PCR406-6 PCR406-5...Commutated turn-off time SCR SYMBOL DV/DT TGD TG TEST CONDITIONS IG=10mA, dIG/dt=0.1A/s, Tj...
Description KPT 10C 10#20 SKT PLUG
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 0.8 A, 400 V, SCR, TO-92
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 星期PCR406可控硅整流器是高性能的规划扩散PNP器件
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices

File Size 61.79K  /  2 Page

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    2N5064

NXP Semiconductors
Philips Semiconductors
Part No. 2N5064
OCR Text gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching an...commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k...
Description Thyristor sensitive gate

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For gate-commutated Found Datasheets File :: 737    Search Time::4.609ms    
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