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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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Part No. |
MTP4N40E MTP4N40E-D
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OCR Text |
... a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converte...20 40 4.0 3.0 14 74 0.59 - 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ
Designer's Data... |
Description |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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File Size |
239.59K /
8 Page |
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it Online |
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