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extreme temperature silicon ca Datasheet PDF File

For extreme temperature silicon ca Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Kingbright, Corp. Power-One, Inc. NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BZG01 BZG01-C10 BZG01-C100 BZG01-C110 BZG01-C12 BZG01-C120 BZG01-C130 BZG01-C150 BZG01-C16 BZG01-C160 BZG01-C18 BZG01-C180 BZG01-C91 BZG01-C11 BZG01-C13 BZG01-C15 BZG01-C20 BZG01-C200 BZG01-C22 BZG01-C220 BZG01-C24 BZG01-C240 BZG01-C27 BZG01-C270 BZG01-C30 BZG01-C33 BZG01-C36 BZG01-C39 BZG01-C43 BZG01-C47 BZG01-C51 BZG01-C56 BZG01-C62 BZG01-C68 BZG01-C75 BZG01-C82
Description	SMA voltage regulator diodes 200 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 43 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 62 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 220 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC Supervisory Circuit with Watchdog and Manual Reset in 5-Lead SC70 and SOT-23; Package: SC70; No of Pins: 5; temperature Range: Industrial 22 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 10 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 51 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 12 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 120 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 56 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 15 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC SMA voltage regulator diodes 27 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC CMOS Switched-capacitor Voltage Converter; Package: TSSOP; No of Pins: 16; temperature Range: Industrial 91 V, 1.5 W, silicon, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC CMOS Switched-capacitor Voltage Converter; Package: SOIC; No of Pins: 8; temperature Range: Industrial µP Supervisory Circuit with Watchdog Feature, 4.65V Threshold Voltage, Low Supply Current and Active Low Reset Output. Upgrade for ADM699; Package: SOIC; No of Pins: 8; temperature Range: Industrial
File Size	50.46K / 8 Page	View it Online	Download Datasheet

				Vishay
Part No.	DN
Description	NTC Thermistors, Applications Include: temperature Measurement, temperature Control, Inrush Current Limiting, temperature Compensation, Sensing Liquid Level or Air Flow
File Size	48.60K / 4 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation] Microsemi, Corp.
Part No.	1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 1N829TR-2 1N829UR-1-1 1N829UR-1-2 1N824TR 1N824TR-1 1N824TR-1-1 1N824TR-1-2 1N824TR-2 1N823-1-2 1N823-2 1N823A-1 1N821-1-1 1N821ATR 1N827A-1-1 1N827A-1-2 1N827A-2 1N828-1-2 1N828-2 1N821ATR-1 1N821ATR-1-1 1N821ATR-1-2 1N821ATR-2 1N823A-1-1 1N823A-1-2 1N828TR 1N823TR-2 1N827ATR 1N827ATR-1 1N827ATR-1-1 1N827ATR-1-2 1N827ATR-2 1N821 1N827UR-1-1 1N827URTR-1-2 1N829A JANS1N829URTR-1-2 1N821-1 1N821-1-2 1N821-2 1N821A 1N821A-1 1N821A-1-1 1N821A-1-2 1N821A-2 1N821AUR-1 1N821AUR-1-1 1N821AUR-1-2 1N821AURTR-1 1N821AURTR-1-1 1N821AURTR-1-2 1N821TR 1N821TR-1 1N821TR-1-1 1N821TR-1-2 1N821TR-2 1N821UR-1 1N821UR-1-1 1N821UR-1-2 1N821URTR-1 1N821URTR-1-1 1N821URTR-1-2 1N822 1N822-1 1N822-1-1 1N822-1-2 1N822A 1N822TR 1N822TR-1 1N822TR-1-1 1N822TR-1-2 1N822TR-2 1N822UR-1 1N822UR-1-1 1N822UR-1-2 1N822URTR-1 1N822URTR-1-1 1N822URTR-1-2 1N823 1N823-1 1N823-1-1 1N823A 1N823A-2 1N823ATR 1N823ATR-1 1N823ATR-1-1 1N823ATR-1-2 1N823ATR-2 1N823AUR-1 1N823AUR-1-1 1N823AUR-1-2 1N823AURTR-1 1N823AURTR-1-1 1N823AURTR-1-2 1N823TR 1N823TR-1 1N823TR-1-1 1N823TR-1-2 1N823UR-1 1N823UR-1-1 1N823UR-1-2 1N823URTR-1 1N823URTR-1-1 1N823URTR-1-2 1N824 1N824-1 1N824-1-1 1N8
Description	6.2 & 6.55 VOLT temperature COMPENSATED ZENER REFERENCE DIODES 6.2 & 6.55 Volt temperature Compensated 6.2 & 6.55 Volt temperature Compensated 6.2 V, silicon, VOLTAGE REFERENCE DIODE, DO-204AA 0TC Reference Voltage Zener 6.2 & 6.55 VOLT temperature COMPENSATED ZENER REFERENCE DIODES 6.2 V, silicon, VOLTAGE REFERENCE DIODE, DO-204AH 6.2 & 6.55 Volt temperature Compensated 6.2 & 6.55 Volt temperature Compensated
File Size	226.77K / 3 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT60A Q62702-A1188
Description	silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降 From old datasheet system
File Size	23.61K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	ASM121Q3 ASM121
Description	SIMISTOR temperature SENSOR ULTRA-LOW-POWER silicon THERMISTOR SIMISTOR⑩ temperature SENSOR ULTRA-LOW-POWER silicon THERMISTOR
File Size	241.01K / 8 Page	View it Online	Download Datasheet

				Sensitron Semiconductor
Part No.	SD275SCU100B
Description	silicon SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200∑C Operating temperature 120 A, silicon, RECTIFIER DIODE
File Size	40.86K / 3 Page	View it Online	Download Datasheet

				Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
Part No.	CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICONDUCTORCORP-CR80-020 CR60-020 CR60-060LEADFREE CR60-080 CR60-040LEADFREE CR60-120 CR80-010 CR80-080LEADFREE
Description	2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, silicon, RECTIFIER DIODE, DO-5 150 A, 1000 V, silicon, RECTIFIER DIODE, DO-8 80 A, 200 V, silicon, RECTIFIER DIODE, DO-5 60 A, 200 V, silicon, RECTIFIER DIODE, DO-5 60 A, 600 V, silicon, RECTIFIER DIODE, DO-5 60 A, 800 V, silicon, RECTIFIER DIODE, DO-5 60 A, 400 V, silicon, RECTIFIER DIODE, DO-5 60 A, 1200 V, silicon, RECTIFIER DIODE, DO-5 True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; temperature Range: Industrial 80 A, 800 V, silicon, RECTIFIER DIODE, DO-5
File Size	42.64K / 1 Page	View it Online	Download Datasheet

				FREEScaLE[Freescale Semiconductor, Inc]
Part No.	MP3H6115AC6U MP3H6115AC6T1 MP3H6115A6T1 MP3H6115A6U MP3H6115A
Description	High temperature Accuracy Integrated silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned High temperature Accuracy Integrated silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, temperature Compensat
File Size	174.81K / 12 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MPXM2010 MPXM2010D MPXM2010DT1 MPXM2010GS MPXM2010GST1
Description	10 KPA ON CHIP temperature COMPENSATED caLIBRATED silicon PRESSURE SENSORS From old datasheet system 10 kPa On-Chip temperature Compensated & calibrated silicon Pressure Sensors
File Size	85.57K / 8 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

For extreme temperature silicon ca Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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