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  ds-112 Datasheet PDF File

For ds-112 Found Datasheets File :: 1891    Search Time::3.531ms    
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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS650 JCS650F-O-F-N-B JCS650C-O-C-N-B
OCR Text ...ce Current and Temperature R DS (on ) Drain-Source On Resistance [] VGS=10V 0.08 IDR Reverse Drain Current[A] 0.09 10 150 25 0.07 1 VGS=20V 0.06 Note:Tj=25 0.05 0 2 4 6 8 10 12 14 16 18 20 22 0.1 0.2 0...
Description N-CHANNEL MOSFET

File Size 1,223.65K  /  10 Page

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    FQPF32N20C FQP32N20C

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FQPF32N20C FQP32N20C
OCR Text ...on in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 2 10 2 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 10 1 10 s...
Description 200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET

File Size 1,181.06K  /  10 Page

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    California Eastern Laboratories
Part No. NE34018-TI-64-A NE34018-TI-63-A NE34018-A
OCR Text ds = 2 v, i d = 5 ma, f = 2 ghz db 0.6 1.0 g a associated gain at v ds = 2 v, i d = 5 ma, f = 2 ghz db 14.0 16.0 p 1db output power at 1...112 24.5 0.405 -61.0 1.068 12.459 6.00 0.464 176.0 2.714 38.4 0.118 23.7 0.367 -65.4 1.107 11.622 6....
Description GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

File Size 200.00K  /  10 Page

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    SSM6G18NU

Toshiba Semiconductor
Part No. SSM6G18NU
OCR Text ...iode in one package. ? low r ds (on) and low v f r ds(on) = 261 m (max) (@v gs = -1.5v) r ds(on) = 185 m (max) (@v gs = -1....112 m (max) (@v gs = -4.5 v) absolute maximum ratings mosfet ( ta = 25c ) characteristi...
Description Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)

File Size 240.77K  /  8 Page

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    http://
Part No. MCP1XX-240 MCP1XX-300 MCP1XX-450
OCR Text ds-21906a-page 1 mcp102/103/121/131 features ? ultra low supply current: 1.75 a (steady state max.)  precision monitoring options of: - 1....112 data sheet (ds21889) mcp112 push-pull no no v out , v ss , v dd see mcp111/112 data sheet (ds2...
Description Micropower Voltage Supervisors

File Size 344.13K  /  24 Page

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    BUK7207-30B

NXP Semiconductors
Part No. BUK7207-30B
OCR Text ...al purpose power switching. n e ds(al)s 329 mj n r dson = 5.9 m w (typ) n i d 75 a n p tot 167 w. table 1: pinning - sot428 (d-pak), simp...112 a [2] -75a t mb = 100 c; v gs =10v; figure 2 [2] -75a i dm peak drain current t mb =25 c; puls...
Description TrenchMOS standard level FET

File Size 120.56K  /  12 Page

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    TriQuint Semiconductor,Inc.
Part No. TGF4230-SCC
OCR Text ...bol parameter 1/ value notes v ds drain to source voltage 12 v v gs gate to source voltage range 0 to -5.0 volts p d power dissipation see ...112.62 0.062 32.60 0.295 -78.80 3.0 0.880 -116.82 4.202 105.49 0.065 27.5...
Description DC - 12 GHz Discrete HFET

File Size 220.39K  /  9 Page

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    FDA28N50F

Fairchild Semiconductor
Part No. FDA28N50F
OCR Text ...2 8 4 0 25 1 is Limited by R DS(on) Operation in This Area *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figu...
Description N-Channel MOSFET 500V, 28A, 0.175Ω

File Size 527.74K  /  8 Page

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    IDT82V2048LBB IDT82V2048LBBG IDT82V2048LDA

Integrated Device Technology
Part No. IDT82V2048LBB IDT82V2048LBBG IDT82V2048LDA
OCR Text ... as ts1/ rd /r/ w ts0/sdi/ wr / ds sdo/rdy/ ack int d[7:0]/ad[7:0] mc[3:0]/a[4:0] mclk trst tck tms tdi tdo jtag tap rtipn rringn ttipn trin...112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 ...
Description OCTAL T1/E1 SHORT HAUL ANALOG FRONT END

File Size 521.35K  /  48 Page

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For ds-112 Found Datasheets File :: 1891    Search Time::3.531ms    
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