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Samsung Semiconductor Co., Ltd.
Samsung Electronic
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| Part No. |
K6F4008U2G-F K6F4008U2G
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| OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) or 0VCS20.2V(CS2 controlled)... |
| Description |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
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| File Size |
154.51K /
9 Page |
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it Online |
Download Datasheet
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K6F3216U6M K6F3216U6M-F
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| OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
| Description |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
148.86K /
9 Page |
View
it Online |
Download Datasheet |
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ATMEL
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| Part No. |
AT90S2313
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| OCR Text |
...
- CS12
PWM11 CS11
PWM10 cs10
page 31 page 32 page 33 page 33 page 34 page 34
Timer/Counter1 - Counter Register High Byte Timer/Counter1 - Counter Register Low Byte Timer/Counter1 - Compare Register High Byte Timer/Counter1 - C... |
| Description |
2-Kbyte In-System programmable Flash Program Memory, 160 byte SRAM, 128 Byte EEPROM, Up to 10 MIPS throughput at 10 Mhz.
8-bit Microcontroller with 2K Bytes of In-System
Programmable Flash
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| File Size |
205.97K /
10 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K1S3216BCD
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| OCR Text |
...le time=1s, 100% duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL,VIN=VIL or VIH IOL=0.1mA IOH=-0.1mA Other inputs = 0~Vcc 1) CS1Vcc... |
| Description |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
164.93K /
10 Page |
View
it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008C2C-GB55 K6T1008C2C-GF70 K6T1008C2C-GL70 K6T1008C2C-GP70 K6T1008C2C-GL55 K6T1008C2C-GB70 K6T1008C2C-TF70 K6T1008C2C-TB55 K6T1008C2C-TB70 K6T1008C2C-RF70 K6T1008C2C-P K6T1008C2C-B K6T1008C2C-F K6T1008C2C-DL70 K6T1008C2C-DL55 K6T1008C2C-DB70 K6T1008C2C-DB55 K6T1008C2C-L K6T1008C2C-NF700
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| OCR Text |
...le time=1s, 100% duty, IIO=0mA, cs10.2V, CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V Read Write 2.4 Test Conditions Min -1 -1 Typ 5 2 20 45 1 0.3 1 0.3 Max 1 1 10 5 35 60 0.4 3 50 10 50 15 A mA V V mA Unit A A mA mA
Cycle time=Min, 100% duty, II... |
| Description |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
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| File Size |
187.70K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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