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NEC Corp. NEC[NEC]
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Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
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Description |
RF Bipolar Transistor; collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC current Gain Min (hfe):20; collector current:200mA MOS FIELD EFFECT TRANSIStoR Pch enhancement type MOS FET
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File Size |
71.11K /
8 Page |
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it Online |
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Motorola, Inc. Motorola Inc Motorola Mobility Holdings, Inc.
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Part No. |
MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68HCL05C4 MC68HSC05C4 MC68HC805C4 MC68HC705C8 MOtoROLAINC.-MC68HCL05C8
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Description |
TRANSIStoR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),to-264AA IGBT; Continuous collector current, Ic:60A; collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
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File Size |
3,416.45K /
64 Page |
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it Online |
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TY Semiconductor Co., Ltd
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Part No. |
2SC3443
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Description |
High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
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File Size |
74.27K /
1 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
BD241CFP
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Description |
Transient Surge Protection Thyristor; Package/Case:MS-013; current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; current Rating:2.2A; Forward current:5A; Forward Voltage:200V; Holding current:150ma 晶体管|晶体管|叩| 100V的五(巴西)总裁| 3A条一(c)| to - 220AB现有
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File Size |
95.82K /
3 Page |
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it Online |
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Price and Availability
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