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ce2 Datasheet PDF File

For ce2 Found Datasheets File :: 2714 Search Time::5.578ms
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				BSI[Brilliance Semiconductor]
Part No.	BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text	...1.5V * Easy expansion with CE1, ce2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4020 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits o...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	215.30K / 12 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
OCR Text	...1.5V * Easy expansion with CE1, ce2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4021 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	222.10K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
OCR Text	...1.5V * Easy expansion with CE1, ce2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4023 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	217.16K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text	...1.5V * Easy expansion with CE1, ce2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4025 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits o...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开 LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8
File Size	187.58K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text	...1.5V * Easy expansion with CE1, ce2 and OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV4020 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits ...
Description	Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 TC55VBM316ASTN40 TC55VBM316ASTN55 TC55VBM316
OCR Text	...le ( CE1 ) is asserted high or (ce2) is asserted low. There are three control inputs. CE1 and ce2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB...
Description	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	212.13K / 15 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VCM208ASTN40 TC55VCM208ASTN55
OCR Text	...le ( CE1 ) is asserted high or (ce2) is asserted low. There are three control inputs. CE1 and ce2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is well suited...
Description	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
File Size	109.21K / 12 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55VCM216ASTN40 TC55VCM216ASTN55
OCR Text	...le ( CE1 ) is asserted high or (ce2) is asserted low. There are three control inputs. CE1 and ce2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB...
Description	262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	197.06K / 14 Page	View it Online	Download Datasheet

				Integrated Silicon Solution Inc
Part No.	IS61SP6464-133PQI
OCR Text	...lay register d clk q bwe bw8 ce ce2 ce2 ce3 ce3 64k x 64 memory array 64 input registers clk output registers clk 64 oe 8 64 oe data[64:1] is61sp6464 issi ? integrated silicon solution, inc. ? 1-800-379-4774 3 rev. a 04/17/01 pin conf...
Description	64K x 64 synchronous pipeline static RAM
File Size	144.76K / 20 Page	View it Online	Download Datasheet

				ICSI
Part No.	IS61SP6464-133PQ
OCR Text	...lay register d clk q bwe bw8 ce ce2 ce2 ce3 ce3 64k x 64 memory array 64 input registers clk output registers clk 64 oe 8 64 oe data[64:1] is61sp6464 integrated circuit solution inc. s3-3 pin configuration 128-pin lqfp and pqfp vccq i/o 3...
Description	133MHz; 3.3V; 64K x 64 synchronous pipelined static RAM
File Size	496.43K / 20 Page	View it Online	Download Datasheet

For ce2 Found Datasheets File :: 2714 Search Time::5.578ms
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