|
|
|
|
|
意法半导 ST Microelectronics STMicroelectronics N.V.
|
Part No. |
93C56 M9306-RDW3T M9306-RDS3T M9306-RDS6T M9306-RDW6T M9306-DW6T M9306-DW3T M9306-DS6T M9306-DS3T M93C06 M93C46 M93C86 M93C66 M9346-TDS6T M9346-TDW6T M9346-TDS3T M9346-TDW3T M9306-WBN6T M9306-WDS6T M9306-WDS3T M9306-WDW6T M9306-WBN3T M9306-WMN3T M9306-WMN6T M9306-WDW3T M93C06BN M93C06DS M93C06DW M93C46BN M93C46DS M93C46DW M93C46MN M93C56BN M93C46-R M93C46-W M93C56-W M9306-BN3T M9306-BN6T M9306-MN3T M9306-MN6T M93C46-RDW M93C46-MN M93C46-MB M93C46-RBN M93C46-RMB M93C46-RMN M9366-TRMN3T M93C66-RBN M9366-TRDW3T M93C66-DW M9366-TWBN6T M9366-TWDS3T M93C66-RDS M9366-TRMN6T M9366-TWBN3T M93C46-RDS M9366-TRBN3T M9366-TRBN6T M9366-TRDS6T M9366-TWDW3T M9366-TWDW6T M9366-TWMN3T M93C66-RDW M9366-TBN3T M9376-WDW3T M9376-WDW6T M9366-TRDW6T M9366-TWDS6T M9366-TBN6T M93C76-WBN M9376-WMN6T M9376-WBN6T M9376-WMN3T M9376-WDS6T M93C66-BN M9366-TRDS3T M9366-TWMN6T M93C76-WMN M9376-WDS3T M9376-WBN3T M9306-RMN3T M9306-RMN6T M9306-TRBN3T M9306-TRBN6T M9306-TRDS3T M9306-TRDS6T M9306-TRMN3T M9306-TWBN6T M9306-TWDS3T M9306-TWDS6T M9306-TWMN3T M9306-TWMN6T M9306-TRDW6T M9306-TWDW3T M9306-TRDW3T M9306-TWDW6T M9306-TWBN3T M9306-TRMN6T M9366-TMN6T M9366-TMN3T M9306-TDW6T M9306-TDS6T M9306-TDW3T M9306-TDS3T M9356
|
Description |
16Kbit / 8Kbit / 4Kbit / 2Kbit / 1Kbit and 256bit 8-bit or 16-bit wide Round Conductor Flat Cable, 3749/100 30 AWG, .025 (0.64) 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbitKbitKbitKbit56 8位或16位全 CONNECTOR ACCESSORY 连接器附 HOT MELT ADHESIVE VO-Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽)MICROWIRE串行EEPROM的访 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM 16KbitKbitKbitKbitKbit位或16位宽)MICROWIRE串行EEPROM的访 HOT MELT ADHESIVE Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽)MICROWIRE串行EEPROM的访 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbit4KbitKbit1Kbit56 8位或16位全 TRANS PREBIASED NPN 200MW SOT323 16KbitKbitKbitKbitKbit56 8位或16位全 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM
|
File Size |
260.42K /
31 Page |
View
it Online |
Download Datasheet |
|
|
|
意法半导 STMicroelectronics
|
Part No. |
M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-DS3P_W M93C46-DS3TG_S M93C46-DS3TG_W M93C46-DS3TP_S M93C46-DS3TP_W M93C46-DS6G_S M93C46-DS6G_W M93C46-DS6P_W M93C46-DS6TG_S M93C46-DS6TG_W M93C46-DS6TP_S M93C46-DS6TP_W M93C46-DW3G_S M93C46-DW3G_W M93C46-DW3P_S M93C46-DW3P_W M93C46-RMB3G_S M93C46-RMB3G_W M93C46-RMB3P_S M93C46-RMB3P_W M93C46-RMB3TG_S M93C46-RMB3TG_W M93C46-RMB3TP_S M93C46-RMB3TP_W M93C46-RMB6G_S M93C46-RMB6G_W M93C46-RMB6P_S M93C46-RMB6P_W M93C46-RMB6TG_S M93C46-RMB6TG_W M93C66-MB3G_S M93C66-MB3G_W M93C66-MB3P_S M93C66-MB3P_W M93C66-MB3TG_S M93C66-MB3TG_W M93C66-MB3TP_S M93C66-MB3TP_W M93C66-MB6G_S M93C66-MB6G_W M93C66-MB6P_S M93C66-MB6P_W M93C66-MB6TG_S M93C66-MB6TG_W M93C66-RMB3G_S M93C66-RMB3G_W M93C66-RMB3P_S M93C66-RMB3P_W M93C66-RMB3TG_S M93C66-RMB3TG_W M93C66-RMB3TP_S M93C66-RMB3TP_W M93C66-RMB6G_S M93C66-RMB6G_W M93C76-MB3G_S M93C76-MB3G_W M93C76-MB3P_S M93C76-MB3P_W M93C76-MB3TG_S M93C76-MB3TG_W M93C76-MB3TP_S M93C76-MB3TP_W M93C76-MB6G_S M93C76-MB6G_W M93C76-MB6P_S M93C76-MB6P_W M93C76-MB6TG_S M93C76-MB6TG_W M93C76-RMB3G_S M93C76-RMB3G_W M93C76-RMB3P_S M93C76-RMB3P_W M93C76-RMB3TG_S M93C76-RMB3TG_W M93C76-RMB3TP_S M93C76-RMB3TP_W M93C76-RMB6G_S M93C76-RMB6G_
|
Description |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
File Size |
278.87K /
38 Page |
View
it Online |
Download Datasheet |
|
|
|
Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
|
Part No. |
BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25C33Y14I-1.8 CAT25C09S-1.8 SST29VE020-200-4C-EH CAT25C09Y14I-1.8 CAT25C09YI-1.8 BR24C16-DW6TP CAT25C02R-1.8 CAT24WC04L-1.8 SST29LE010-150-4C-WH CAT25C64S-1.8 CAT25C04S-1.8 SST29LE010-150-4C-WHE CAT24WC04U-1.8 SST29LE010-150-4I-EH BR93L66F-WE2 CAT93C86V-1.8 SST29LE010-150-4C-EH SST29EE010-70-4I-WH SST29EE512-70-4C-PH CAT25C33U14-1.8 CAT24WC08WI-1.8 CAT25C03U CAT25C65Y20 CAT25320VI-G CAT25320YI-G CAT24WC129XI BR95010-WMN6TP BR25L320FJ-WE2 BR93L46RFV-WE2 CAT93C56YI-1.8 CAT24C08WI-G CAT25C02Z-1.8 CAT24C01BJI CAT28C64BH13I-90 CAT25C64U14I CAT28C257GI-15 CAT28C257GA-12 CAT24WC01P CAT34WC02JI-1.8 CAT34RC02YI CAT25C03Z-1.8 CAT28C257LI-12 CAT28C512H-15T CAT28LV256LI-25 CAT28C512HI-15 CAT25020V-1.8 CAT24FC256WI-1.8
|
Description |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1KBIT EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
|
File Size |
232.70K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
意法半导 EEPROM STMicroelectronics N.V.
|
Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
|
Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
|
File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
|
Bom2Buy.com
Price and Availability
|
JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
Part: BR95010-WMN6TP |
Maker: Rohm Semiconductor |
Pack: ETC |
Stock: Reserved |
Unit price
for : |
50: $0.00 |
100: $0.00 |
1000:
$0.00 |
Email: oulindz@gmail.com |
Contact us |
|
|