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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
2SA1162
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| Description |
PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-346
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| Tech specs |
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Official Product Page
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TOSHIBA
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| Part No. |
2SA1160
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| Description |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
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| File Size |
177.10K /
3 Page |
View
it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
2SA1163
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| Description |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
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| File Size |
162.67K /
4 Page |
View
it Online |
Download Datasheet
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