| |
|
 |
Linear Technology Corporation
|
| Part No. |
LT3693 LT3693EMSE-PBF LT3693EMSE-TRPBF
|
| OCR Text |
... Flag Saturating Switch Design: 95m On-Resistance 0.790V Feedback Reference Voltage Output Voltage: 0.79V to 30V Thermal Protection Soft-Start Capability Small 10-Pin Thermally Enhanced MSOP and (3mm x 3mm) DFN Packages
The LT(R)3693 is ... |
| Description |
36V, 3.5A, 2.4MHz Step-Down Switching Regulator
|
| File Size |
302.87K /
24 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SUMIDA[Sumida Corporation]
|
| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
|
| OCR Text |
...m 180m 160m 150m 140m 130m 100m 95m 81m 74m 69m 67m 63m 54m 24.1m 40m 40m 50m 50m 60m 60m 70m 80m 100m 110m 140m 160m 190m 220m 270m 310m 380m 530m 610m 690m 890m 1.01 1.18 1.57 1.84 2.10 2.80 3.21 4.21 4.94 6.16 6.84 7.89 11.5 13.2 15.3 22... |
| Description |
POWER INDUCTORS
|
| File Size |
170.29K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
SYNC-POWER[SYNC POWER Crop.]
|
| Part No. |
SPN1443AS35RG SPN1443A
|
| OCR Text |
...r
FEATURES 30V/2.8A,RDS(ON)= 95m@VGS=10V 30V/2.3A,RDS(ON)= 105m@VGS=4.5V 30V/1.5A,RDS(ON)= 135m@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-353 ( SC-7... |
| Description |
N-Channel Enhancement Mode MOSFET
|
| File Size |
198.53K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Amphenol, Corp.
SYNC-POWER[SYNC POWER Crop.]
|
| Part No. |
SPP3413S23RG SPP3413
|
| OCR Text |
...e. FEATURES -20V/-3.4A,RDS(ON)= 95m@VGS=-4.5V -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V -20V/-1.7A,RDS(ON)=145m@VGS=-1.8V -20V/-1.0A,RDS(ON)=210m@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and max... |
| Description |
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
| File Size |
195.89K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
STANSON[Stanson Technology]
|
| Part No. |
ST2306
|
| OCR Text |
... @VGS = 10V 30V/2.8A, RDS(ON) = 95m-ohm @VGS = 5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L /SOT-23 package design
D G
1
1.Gate 2.Source
S
2
3.Dr... |
| Description |
N Channel Enhancement Mode MOSFET
|
| File Size |
146.51K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
STANSON[Stanson Technology]
|
| Part No. |
ST3413
|
| OCR Text |
...
FEATURE
-20V/-3.4A, RDS(ON) = 95m-ohm
D G
1
1.Gate 2.Source
S
2
3.Drain
3
@VGS = -4.5V -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V - 20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.8V Super high density cell design for extremely l... |
| Description |
P Channel Enhancement Mode MOSFET
|
| File Size |
135.25K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
TSC[Taiwan Semiconductor Company, Ltd]
|
| Part No. |
TSM2302CX TSM2302
|
| OCR Text |
... (on), Vgs @ 2.5V, Ids @ 3.1A = 95m
Pin assignment: 1. Gate 2. Source 3. Drain
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and... |
| Description |
20V N-Channel Enhancement Mode MOSFET
|
| File Size |
164.76K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
CET[Chino-Excel Technology]
|
| Part No. |
CEU3700 CED3700
|
| OCR Text |
95m @VGS = 10V. RDS(ON) = 130m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
|
| File Size |
202.17K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
