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Mitsubishi Electric Corporation
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| Part No. |
CM900HB-90H
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| OCR Text |
.................................. 900a v ces ....................................................... 4500v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. cm900h... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
51.87K /
4 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
CM450HA-5F
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| OCR Text |
...stive Load IE = 450A, diE/dt = -900a/s IE = 450A, diE/dt = -900a/s VGE = 0V, VCE = 10V Test Conditions Min. -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- 7.6 Max. 132 6 4.5 1200 2700 900 500 300 -- Units nF nF nF ns ns ns ns ns C
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| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
48.02K /
4 Page |
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it Online |
Download Datasheet |
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SavantIC
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| Part No. |
BD900a
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| OCR Text |
...tter DESCRIPTION
BD896A/898A/900a
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER BD896A VCBO Collector-base voltage BD898A BD900a BD896A VCEO Collector-emitter voltage BD898A BD900a VEBO IC IB Emitter-base voltage Collector curren... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
128.37K /
3 Page |
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it Online |
Download Datasheet |
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Semikron
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| Part No. |
SKIIP1803GB172-3DW
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| OCR Text |
...
typ.
max.
Units
IC = 900a, Tj = 25 (125)C; 1,9 (2,2) 2,4 V - measured at terminal VCEO Tj = 25 (125) C; at terminal 1,0 (0,9) 1,2 (1,1) V - rCE Tj = 25 (125) C; at terminal 1,0 (1,4) 1,3 (1,7) - m ICES VGE=0,VCE=VCES,Tj=25(125) C... |
| Description |
SKiiP 3 - SK integrated intelligent Power 2-pack
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| File Size |
166.98K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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