|
|
 |
Philips NXP Semiconductors N.V.
|
Part No. |
PHU11NQ10T-01 PHU11NQ10T127 PHU11NQ10T
|
OCR Text |
...0 V Tmb = 25 C VGS = 10 V; ID = 9 A; Tj = 25 C Typ 150 Max 100 10.9 57.7 175 180 Unit V A W C m drain-source voltage (DC) drain current (DC)...01 -- 28 May 2002
2 of 12
Philips Semiconductors
PHU11NQ10T
TrenchMOSTM standard level FET... |
Description |
TrenchMOS(tm) standard level FET From old datasheet system 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, I2PAK-3
|
File Size |
76.79K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Philips
|
Part No. |
PHP_PHB_PHD71NQ03LT-01 PHD71NQ03LT PHP71NQ03LT PHB71NQ03LT
|
OCR Text |
...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 C Tj = 175...01 -- 25 June 2002
5 of 14
Philips Semiconductors
PHP/PHB/PHD71NQ03LT
TrenchMOSTM logic le... |
Description |
TrenchMOS (TM) logic level FET From old datasheet system
|
File Size |
93.41K /
14 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Philips
|
Part No. |
PHM30NQ10T-01 PHM30NQ10T
|
OCR Text |
...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150C Tj = -55C IDSS drain-source leakage current VDS = 80 V; VGS = 0 V Tj = 25 C Tj = 150 C...01 -- 29 January 2003
5 of 12
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level... |
Description |
TrenchMOS(tm) standard level FET From old datasheet system
|
File Size |
80.46K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Philips
|
Part No. |
PHM18NQ15T-01 PHM18NQ15T
|
OCR Text |
... 150 V s Ptot 62.5 W s ID 17.9 A s RDSon 75 m.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685-1 (QLPAK), si...01 -- 30 January 2003
2 of 12
Philips Semiconductors
PHM18NQ15T
TrenchMOSTM standard level... |
Description |
TrenchMOS(tm) standard level FET From old datasheet system
|
File Size |
74.07K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Philips
|
Part No. |
PHB64N03LT-01 PHB64N03LT
|
OCR Text |
...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 175...01 -- 27 August 2002
5 of 12
Philips Semiconductors
PHB64N03LT
TrenchMOSTM logic level FET... |
Description |
TrenchMOS (TM) logic level FET From old datasheet system
|
File Size |
79.47K /
12 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|