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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW25N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...25a IC=12.5A
Tj=+150C Tj=+25C Tj=-40C
3V
2V
1V
4V
5V
6V
7V
8V
9V
10... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
333.32K /
13 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT40GF120JRDQ2
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| OCR Text |
...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 50A
7
MIN
TYP
MAX
UNIT pF V nC
3460 385 225 9.5 340 30 205 150 25 43 26...25a
3
IC = 50A IC = 25a
2
2
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
1... |
| Description |
FAST IGBT & FRED
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| File Size |
572.02K /
9 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20SG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800v ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 50A, R G = 0.8 Inductive switch...25a
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current... |
| Description |
Phase leg Series & parallel diodes MOSFET Power Module
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| File Size |
268.76K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120A20D
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800v ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 50A, R G = 0.8 Inductive switch...25a
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 50 40 30 20 10 0
R... |
| Description |
Phase leg with Series diodes MOSFET Power Module
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| File Size |
296.82K /
6 Page |
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it Online |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120A20DG
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| OCR Text |
...itching @ 125C VGS = 15V VBus = 800v ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 50A, R G = 0.8 Inductive switch...25a
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current... |
| Description |
Phase leg with Series diodes MOSFET Power Module 50 A, 1200 V, 0.24 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
267.42K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50GT120JRDQ2
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| OCR Text |
...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 50A
150 23 50 215 26 3585 4835 1910 23 50 255 50 3580 6970 2750
A
ns
RG = 1...25a
IC = 25a
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-t... |
| Description |
Thunderbolt IGBT
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| File Size |
448.35K /
9 Page |
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it Online |
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MICROSEMI CORP
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| Part No. |
APT25GN120SG
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| OCR Text |
...ductive switching (25c) v cc = 800v v ge = 15v i c = 25a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 25a r g = 1.0 ? 7 t j = +125c characteristic input capacitance output capacitance reverse ... |
| Description |
67 A, 1200 V, N-CHANNEL IGBT
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| File Size |
193.61K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTGF50DH120T
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| OCR Text |
...= 200A IF = 100A IF = 100A VR = 800v di/dt =200A/s IF = 100A VR = 800v di/dt =200A/s
Tj = 125C Tj = 25C
Typ 100 2.0 2.3 1.8 420
Max...25a
250s Pulse Test < 0.5% Duty cycle V GE = 15V 250s Pulse Test < 0.5% Duty cycle
Output charac... |
| Description |
Asymmetrical Bridge - IGBT
Asymmetrical - Bridge NPT IGBT Power Module
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| File Size |
293.33K /
6 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTGF50A120T
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| OCR Text |
...F = 120A IF = 60A IF = 60A VR = 800v di/dt =400A/s IF = 60A VR = 800v di/dt =400A/s
Tj = 125C Tj = 25C Tj = 125C
Typ 60 2.0 2.3 1.8 37...25a
250s Pulse Test < 0.5% Duty cycle V GE = 15V 250s Pulse Test < 0.5% Duty cycle
Output charac... |
| Description |
Phase Leg - IGBT
Phase leg NPT IGBT Power Module
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| File Size |
291.38K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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