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  8-bit 1m Datasheet PDF File

For 8-bit 1m Found Datasheets File :: 7052    Search Time::1ms    
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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1511V18-250BZC CY7C1511V18-167BZC
OCR Text ...elf-timed writes ? available in 8,x9, 18, and 36 configurations ? full data coherency providing most current data ? core vdd=1.8(+/-0.1v); i...bit words (cy7c1511v18) or 9-bit words (cy7c1526v18) or 18-bit words (cy7c1513v18) or 36-bit words...
Description 72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165

File Size 367.02K  /  23 Page

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    CY7C1314BV18 CY7C1910BV18-200BZC CY7C1910BV18-250BZC

Cypress Semiconductor
Part No. CY7C1314BV18 CY7C1910BV18-200BZC CY7C1910BV18-250BZC
OCR Text ...location is associated with two 8-bit words (CY7C1310BV18) or 9-bit words (CY7C1910BV18) or 18-bit words (CY7C1312BV18) or 36-bit words (CY7C1314BV18) that burst sequentially into or out of the device. Since data can be transferred into and...
Description 18-Mbit QDR-II SRAM 2-Word Burst Architecture

File Size 256.95K  /  23 Page

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    CMX639E2 CMX639

CML Microcircuits
CMLMICRO
Part No. CMX639E2 CMX639
OCR Text ...................................8 1.7.1 Electrical Performance...............................................................8 1.7.2 Packagi...bit companding algorithm. A logical '0' sets a 4-bit companding algorithm. Internal 1 M pull-up. Clo...
Description Consumer / Commercial CVSD Digital Voice Codec

File Size 533.81K  /  17 Page

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    HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 HYB5118165BSJ HYB3118165BST-60 HYB3118165BSJ-50 HYB5118165BST-60 HYB5

Siemens Semiconductor Group
SIEMENS AG
Part No. HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 HYB5118165BSJ HYB3118165BST-60 HYB3118165BSJ-50 HYB5118165BST-60 HYB5118165BSJBST-50-
OCR Text ...ot connected n.c. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 a5 a6 a7 oe a8 ucas a9 i/o11 i/o13 i/o12 a0 a1 a2 i/o3 i/o4 i/o5 i/o6 i/o7 we ras n.c. n.c. spp02812 v ss ss v cc v i/o8 i/o10 i/...
Description High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1m X 16 EDO DRAM, 50 ns, PDSO44
1m x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1m×16-Bit Dynamic RAM(1m×16动态RAM(快速页面模)
1m×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1m×16动RAM)

File Size 195.10K  /  24 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18-300BZI CY7C1248V18-333BZI CY7C1250V18-333BZI CY7C1257V18-300BZI CY7C1248V18-375BZI CY7C1250V18-375BZI CY7C1246V18-375BZI CY7C1257V18-333BZI CY7C1248V18-300BZI CY7C1246V18-333BZC CY7C1246V18-300BZXI CY7C1248V18-375BZXI CY7C1246V18-300BZC CY7C1248V18-375BZXC CY7C1248V18-333BZXI CY7C1248V18-333BZXC CY7C1248V18-300BZXI CY7C1248V18-300BZXC CY7C1246V18-375BZXC CY7C1246V18-375BZXI CY7C1246V18-333BZXC CY7C1246V18-333BZXI CY7C1246V18-300BZXC CY7C1248V18-375BZC CY7C1248V18-333BZC CY7C1248V18-300BZC CY7C1246V18-375BZC CY7C1257V18-300BZC CY7C1257V18-300BZXC CY7C1257V18-300BZXI CY7C1257V18-333BZXI CY7C1257V18-375BZC CY7C1257V18-333BZC CY7C1257V18-333BZXC CY7C1257V18-375BZI CY7C1250V18-333BZC CY7C1250V18-300BZXC
OCR Text ...eatures ? 36-mbit density (4m x 8, 4m x 9, 2m x 18, 1m x 36) ? 300 mhz to 375 mhz clock for high bandwidth ? 2-word burst for reducing addre...bit words (cy7c1246v18), 9-bit words (cy7c1257v18), 18-bit words (cy7c1248v18), or 36-bit words (cy7...
Description 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构(2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1m X 36 DDR SRAM, 0.45 ns, PBGA165

File Size 1,030.62K  /  27 Page

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    LH53B16R00

Sharp Corporation
Sharp Electrionic Components
Part No. LH53B16R00
OCR Text ...A8 A9 A10 A11 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 70 69 68 67 66 65 64 63 62...bit / x32 bit (word/double word) mode select input CE OE VCC GND NC Chip enable input Output e...
Description CMOS 16M (1m x 16/512K x 32) MROM

File Size 56.60K  /  6 Page

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    MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Part No. DS1556 DS1556WP-120IND DS1556-70 DS1556-70IND DS1556P-70 DS1556P-70IND DS1556W-120 DS1556W-120IND DS1556WP-120
OCR Text ...3 DS1556 30 4 29 5 28 6 27 7 26 8 25 9 24 10 23 11 22 12 21 13 14 15 16 20 19 18 17 VCC A15 IRQ/FT WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ...bit of the Flags Register (B4 of 1FFF0h) is not writable and should always be a 0 when read. If a 1 ...
Description 1m, NONVOLATILE, Y2K-COMPLIANT TIMEKEEPING RAM

File Size 479.88K  /  20 Page

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    CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI CY7C1543V18-300BZXC CY7C1543V18-300BZXI CY7C1543V18-333BZC CY7C1543V18

Cypress Semiconductor
Part No. CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI CY7C1543V18-300BZXC CY7C1543V18-300BZXI CY7C1543V18-333BZC CY7C1543V18-333BZI CY7C1543V18-333BZXC CY7C1543V18-333BZXI CY7C1543V18-375BZC CY7C1543V18-375BZI CY7C1543V18-375BZXC CY7C1543V18-375BZXI CY7C1541V18-375BZC CY7C1556V18-375BZC CY7C1545V18-375BZC CY7C1545V18-333BZI CY7C1545V18-300BZC CY7C1545V18-300BZI CY7C1545V18-300BZXC CY7C1545V18-333BZC CY7C1545V18-300BZXI CY7C1541V18-300BZI CY7C1541V18-333BZI CY7C1541V18-333BZXI CY7C1541V18-333BZXC
OCR Text ... 2.0 cycles: CY7C1541V18 - 8M x 8 CY7C1556V18 - 8M x 9 CY7C1543V18 - 4M x 18 CY7C1545V18 - 2M x 36 Separate independent read and write da...bit words (CY7C1541V18), 9-bit words (CY7C1556V18), 18-bit words (CY7C1543V18), or 36-bit words (CY7...
Description 72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

File Size 983.61K  /  28 Page

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    CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZI CY7C1566V18-400BZXC CY7C1566V18-400BZXI CY7C1568V18-400BZXC

Cypress Semiconductor, Corp.
Part No. CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZI CY7C1566V18-400BZXC CY7C1566V18-400BZXI CY7C1568V18-400BZXC
OCR Text ...location is associated with two 8-bit words (CY7C1566V18), 9-bit words (CY7C1577V18), 18-bit words (CY7C1568V18), or 36-bit words (CY7C1570V18) that burst sequentially into or out of the device. Asynchronous inputs include an output impedan...
Description 4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 419.60K  /  28 Page

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