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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
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| Part No. |
IRFR3911
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| OCR Text |
...5 50 75 100 125 150 175 0 24 48 72 96 120 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.4a
www.kersemi.com 7 irfr3911/irfu3911 p.w. period di/dt diode recovery dv... |
| Description |
SMPS MOSFET
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| File Size |
3,713.04K /
10 Page |
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it Online |
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| Part No. |
IRFR3911PBF
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| OCR Text |
...5 50 75 100 125 150 175 0 24 48 72 96 120 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.4a
www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple... |
| Description |
14 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| File Size |
225.13K /
11 Page |
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it Online |
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International Rectifier
List of Unclassifed Man...
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| Part No. |
AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR2905Z AUIRFR2905ZSTRR
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| OCR Text |
...
d
g
59 42k 42 240 110 0.72 20 55 82 See Fig.12a, 12b, 15, 16 -55 to + 175
k
Units
A
W W/C V mJ A mJ C
300 (1.6mm from ...0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
f
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| Description |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
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| File Size |
286.11K /
13 Page |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP4575M
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| OCR Text |
...2 6 82 36 157 130
Max. Units 72 88 -3 -1 -25 100 34 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature ...0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge ... |
| Description |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
127.22K /
7 Page |
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it Online |
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Price and Availability
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