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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
AM1214-325
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| OCR Text |
... 1400MHz = =
13Sec 2%
PIN = 75W PIN = 75W PIN = 75W
VCC = 45V VCC = 45V VCC = 45V
325 38 6.4
360 45 6.8
-- -- --
W % dB
Pul se Widt h Duty Cycle
TYPICAL PERFORMANCE POWER OUTPUT & EFFICIENCY vs FREQUENCY
2/4
A... |
| Description |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
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| File Size |
63.84K /
4 Page |
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it Online |
Download Datasheet
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SGS Thomson Microelectronics
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| Part No. |
AN1537
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| OCR Text |
....01.2005 0.3w and < 15w 1.0w 0.75w 0.30w 15w and < 50w 1.0w 0.75w 0.50w 50w and < 75w 1.0w 0.75w 0.75w input voltage range (v in )88to264vac mains frequency (f l ) 50/60hz maximum output power (p out ) 45w output vout = 18v 3% iout = 2.... |
| Description |
A SIMPLE TRICK ENHANCES L5991 STANDBY FUNCTION
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| File Size |
252.42K /
18 Page |
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it Online |
Download Datasheet |
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HVVi Semiconductors, Inc.
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| Part No. |
HVV1214-075
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| OCR Text |
... VG1 Drain-Source Breakdown OUT=75W,F=1200MHz,1400MHz Power POUT=75W,F=1200MHz,1400MHz 110 21 VA dB IGSS P Gate Leakage Current VGS=5V,VDS=0V <1 IRL11IRL1 Input Return Loss Loss PVGS=0V,VDS=48V 9 dB IDSS Drain Leakage Current <10 A OUT=75W,... |
| Description |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
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| File Size |
478.51K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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