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528-byte Datasheet PDF File

For 528-byte Found Datasheets File :: 375 Search Time::3.203ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C
OCR Text	...erformed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9K1216Q...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	806.29K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216D0C
OCR Text	...Block Erase : (16K + 512)Byte * 528-byte Page Read Operation - Random Access : 10s(Max.) - Serial Page Access : 60ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit NAND Flash Memory
File Size	351.33K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text	...formed in typically 200s on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50...
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
File Size	902.07K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text	...formed in typically 200s on the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte. The I/O pins serve as the...
Description	128M x 8 Bit NAND Flash Memory
File Size	945.71K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text	...Block Erase : (16K + 512)Byte * 528-byte Page Read Operation - Random Access : 12 s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexe...
Description	128M x 8 Bit NAND Flash Memory
File Size	465.75K / 37 Page	View it Online	Download Datasheet

				Toshiba
Part No.	TC58NS128DC EA10127
OCR Text	...mory (NAND E2PROM) organized as 528 bytes x 32 pages x 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Er...
Description	From old datasheet system
File Size	713.71K / 33 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TC58NS256DC EA10128
OCR Text	...mory (NAND E2PROM) organized as 528 bytes x 32 pages x 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Er...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) From old datasheet system TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
File Size	713.61K / 33 Page	View it Online	Download Datasheet

				Transwitch Corp
Part No.	TXC-04216AIBG
OCR Text	...65,096; 5,289,507; 5,297,180; 5,528,598; 5,535,218 U.S. and/or foreign patents issued or pending Copyright 2000 TranSwitch Corporation E1Mx...Byte Processing .......................................................................................
Description	TXC-04216 E1MX16 Device E1 Mapper 16-Channel From old datasheet system
File Size	953.21K / 144 Page	View it Online	Download Datasheet

				Cirrus Logic
Part No.	CL-CR3490
OCR Text	...0-6961 Wake Forest, NC TEL: 919/528-6877 FAX: 919/528-6878 Burlington, MA TEL: 781/229-5835 FAX: 781/229-5888 International FRANCE Paris TEL: 33/1-48-12-2812 FAX: 33/1-48-12-2810 GERMANY Herrsching TEL: 49/81-52-92460 FAX: 49/81-52-924699 J...
Description
File Size	55.73K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	NAND01G-A NAND01GW3A NAND01GW3A0AN6
OCR Text	528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Up to 1 Gbit memory array - Up to 32 Mbit spare area - Cost effective solutions for mass s...
Description	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
File Size	384.83K / 55 Page	View it Online	Download Datasheet

For 528-byte Found Datasheets File :: 375 Search Time::3.203ms
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