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    IRL-81-A

OSRAM GmbH
Part No. IRL-81-a
OCR Text ...id 850 nm spectral bandwidth at 50% of i max (i f = 100 ma, t p = 20 ms) (typ) ? 30 nm half angle (typ) ? 12 dimensions of active chip a...a, t p = 100 s) (typ (max)) v f 2.4 ( 3) v reverse current (v r = 5 v) i r not designed for rever...
Description High Power Infrared LED

File Size 160.03K  /  9 Page

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    Molex Electronics
Part No. a-42267-10a
OCR Text ...- mating interface (mm) 2.50 mm plating min: mating (in) 101.6 plating min: mating (m) 2.54 plating min: termination...a multiple part number rohs certificate of compliance, click here please visit t...
Description 2.50mm (.098) Pitch SPOX Header Shrouded In-line Footprint 10 Circuits White

File Size 137.65K  /  6 Page

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    IRL-80-A

OSRAM GmbH
Part No. IRL-80-a
OCR Text ...ak 950 nm spectral bandwidth at 50% of i max spektrale bandbreite bei 50% von i max (i f = 20 ma, t p = 20 ms) (typ) ? 55 nm half angle ha...a 0.09 mm 2 dimensions of active chip area abmessungen der aktiven chipfl?che (typ) l x w 0.3 x 0.3 ...
Description Gaas infrared emitting diode

File Size 153.71K  /  10 Page

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    California Eastern Laboratories
Part No. NE651R479a-T1-a
OCR Text ...stance, channel to case c/w 30 50 f = 1.9 ghz, v ds =3.5 v p in = +15 dbm, r g = 1 k ? , i dsq = 50 ma (rf off) 2 notes: 1. p in = 0 dbm. 2. dc performance is 100% tested. wafers are sample tested for rf performance. wafer reject...
Description MEDIUM POWER Gaas HJ-FET

File Size 453.74K  /  11 Page

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    California Eastern Laboratories
Part No. NE552R479a-T1a-a
OCR Text ... 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain a w 0 x 0 0 1 absolute maximum ratings 1 (t a = 25 c) symbols pa...
Description NECs 3.0 V, 0.25 W L&S-BaND MEDIUM POWER SILICON LD-MOSFET

File Size 408.19K  /  9 Page

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    SEC Electronics Inc.
Part No. SS3413-a SS3413-aESOT SS3413-aESTT SS3413-aEUa SS3413-aKSOT SS3413-aKSTT SS3413-aKUa SS3413-aLSOT SS3413-aLSTT SS3413-aLUa
OCR Text ...ge temperature rang t s - 50 to 150 c esd sensitivity - 4000 v exceeding the absolute maximum ratings may cause permanent ...a = 25 c , v dd =2.75v. parameter symbol test conditions min typ max units operati...
Description CMOS Omnipolar High Sensitivity Micropower Hall Switch

File Size 269.39K  /  10 Page

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    Samtec, Inc
Part No. QTH-040-01-L-D-DP-a
OCR Text 50 mm) .0197" qth series qth pins per row no. of pairs plating option C030, C060, C090 (60 total pins per bank = Cd) C020, C040, C060 (2...a other option Ck = (7.00 mm) .275" dia polyimide flm pick &amp; place pad (n/a with -05 &amp; -07 lea...
Description HIGH-SPEED GROUND PLaNE HEaDER

File Size 284.67K  /  1 Page

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    CEL[California Eastern Labs]
Part No. UPa814T-T1-a UPa814T
OCR Text ...NT vs. BaSE TO EMITTER VOLTaGE 50 VCE = 1 V Total Power Dissipation, PT (mW) Free air 200 El em Collector Current, IC (ma...a 200 DC CURRENT GaIN vs. COLLECTOR CURRENT VCE = 1 V Collector Current, IC (ma) 180 a 160...
Description NPN SILICON HIGH FREQUENCY TRaNSISTOR

File Size 111.41K  /  4 Page

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