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				Infineon Technologies AG
Part No.	PTFA212401E PTFA212401F
OCR Text	2110 - 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and ther...
Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
File Size	485.68K / 11 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. N.A. ETC List of Unclassifed Manufacturers
Part No.	MPS-2100 MPS-2100-006G MPS-2100-006GR
OCR Text	...Metrodyne Microsystem Corp MPS-2110 series Pressure Sensor n FEATURES Competitive price dual in-line package Wide operating temperature range:- 40 to +85o C Solid-state reliability Easy to Use Easily Embedded in OEM Equipment ...
Description	Pressure Sensor
File Size	82.44K / 4 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S21050LR3 MRF6S21050LR308 MRF6S21050LSR3
OCR Text	...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	389.60K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G22L-130N
OCR Text	...rier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 D (%) 32 33 ACPR (dBc) -32[1] -39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at ...
Description	Power LDMOS transistor
File Size	145.63K / 13 Page	View it Online	Download Datasheet

				TAI-SAW TECHNOLOGY CO., LTD.
Part No.	TA0756A
OCR Text	...enter Frequency Insertion Loss (2110 ~ 2155 MHz) Amplitude Ripple (2110 ~ 2155 MHz) VSWR (2110 ~ 2155 MHz) Attenuation (Reference level from 0 dB) 1800 ~ 2070 2195 ~ 2400 MHz MHz dB dB 25 25 34 40 Fc IL REV. NO.:1 RoHS Compliant Lead fre...
Description	SAW Filter 2132.5 MHz SMD 3.0X3.0 mm
File Size	267.23K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA210601E PTFA210601F
OCR Text	2110 - 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and therm...
Description	Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
File Size	231.55K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA210701E PTFA210701F
OCR Text	2110 - 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and ...
Description	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
File Size	378.40K / 10 Page	View it Online	Download Datasheet

				Sitronix Technology Co., Ltd.
Part No.	ST7921
OCR Text	...[74] S[75] S[76] S[77] X -2240 -2110 -1980 -1860 -1740 -1620 -1500 -1380 -1260 -1140 -1020 -900 -780 -660 -540 -420 -300 -180 -60 60 180 300 420 540 660 780 900 1020 Y -1160 -1160 -1160 -1160 -1160 -1160 -1160 -1160 -1160 -1160 -1160 -1160 ...
Description	96CH Segment Driver For Dot Matrix LCD
File Size	73.43K / 11 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	CXG1213XR
OCR Text	..., 830 to 885MHz 1920 to 1980MHz 2110 to 2170MHz RF4 - RF2, 830 to 885MHz 2 Insertion loss IL 3 RF1- RF3, 1920 to 1980MHz 2110 to 2170MHz 830 to 885MHz 1920 to 1980MHz 2110 to 2170MHz RF1 - RF2, 830 to 885MHz 4 1920 to 1980MHz 2110 to 2170MH...
Description	High Power DPDT Switch with Logic Control
File Size	174.56K / 9 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MHL21336N
OCR Text	... 30 31 33 db gain flatness (f = 2110 - 2170 mhz) g f ? 0.15 0.4 db power output @ 1 db compression (f = 2140 mhz) p1db 34 35 ? dbm third order intercept (f1 = 2137 mhz, f2 = 2142 mhz) ito 44 45 ? dbm noise figure (f = 2170 mhz) nf ? 4.5 5 d...
Description	3G Band RF Linear LDMOS Amplifier 3G频段射频线性LDMOS的放大器
File Size	105.55K / 5 Page	View it Online	Download Datasheet

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