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  16 14 dv-in 200 Datasheet PDF File

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ... 730 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance RJC RCS RJA RJA Solderin...14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF3805/S/L 10000 Duty Cycle = Sing...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramet...14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF3808S/IRF3808L 10000 1000 Ava...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal ...14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF3808 1000 Duty Cycle = Single Pu...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...3 8A VDS = - 44V VDS = - 28V 16 C , C a p a c ita n c e (p F ) 5000 C is s 4000 12 C o ss 3000 8 2000 C rs s ...14. For P-Channel HEXFETS IRF4905S/L D2Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...3 8A VDS = - 44V VDS = - 28V 16 C , C a p a c ita n c e (p F ) 5000 C is s 4000 12 C o ss 3000 8 2000 C rs s ...14. For P-Channel HEXFETS IRF4905 Package Outline TO-220AB Outline Dimensions are shown in mill...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance P...14 66 39 63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 2...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Ther...14 66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Referen...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 10 00 C iss 70 5 Ciss= Cgs+ C ( Cds= s o t d...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... V V D S = 50 V V D S = 20 V 16 12 8 C rss 200 4 0 1 10 100 A 0 0 5 10 15 20 FO R TE S T C IR C U IT S E E FIG U...14. For N-Channel HEXFETS www.irf.com 7 IRF530NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0....
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...C gd I D = 2.3A VDS = 10V 16 C, Capacitance (pF) 600 C oss 12 400 Ciss 8 200 Crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 11 8 10 12 14 A V DS , Drain-to-Source Voltage (V)...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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