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  15watts Datasheet PDF File

For 15watts Found Datasheets File :: 61    Search Time::14.672ms    
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    天津环球磁卡股份有限公司
Part No. MPSA56-AP MPSA55-AP
OCR Text ...res * * * * * * Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 80V Operating and storage junction temperature range: -55OC to +150 OC Lead Free Finish/RoHS Compliant ("P" Suffix designates RoH...
Description
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    M.S. Kennedy, Corp.
M.S. Kennedy Corp.
Part No. MSK1461 MSK1461B
OCR Text ...p gain accuracy and the typical 1.0mv of input offset voltage will fit well in any error budget. a 500 v/s slew rate and 1200 mhz gain band...5watts 2.) for conservative design, set t j =+125c. 3.) for this example, worst case t a =+50c 4.)...
Description High Speed/Voltage Op Amp(FET输入,高电压高速运算放大器) OP-AMP, 8000 uV OFFSET-MAX, 1200 MHz BAND WIDTH, DFM14

File Size 301.86K  /  5 Page

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    天津环球磁卡股份有限公司
Part No. MPSA13-A MPSA13-AP MPSA14-A MPSA14-AP
OCR Text 1.5watts of power dissipation. ? collector- current 500ma ? collector-base voltage 30v ? operating and storage junction temperature range: -55 o c to +150 o c maximum ratings symbol rating rating unit v ces collector- emitter voltage 30...
Description
File Size 249.83K  /  5 Page

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    Cree Research
Part No. PFM18030
OCR Text 1 of 13 specifications subject to change without notice. u.s. patent no. 6,822,321 rev. 2 http://www.cree.com/ pfm18030 ...5watts average; is-95a pr otocol: is95 forward link pps+ 9ch. acpr conditions: a) 900 khz offset,...
Description 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

File Size 334.11K  /  13 Page

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    BD772-GR BD772-O BD772-R BD772-Y

Micro Commercial Components
Part No. BD772-GR BD772-O BD772-R BD772-Y
OCR Text ... (v cb = - 40vdc, i e =0) --- -1.0 uadc i ceo collector cutoff current (v ce =-30vdc, i b= 0) --- -10 uadc i ebo emitter cutoff current (v eb =-6.0vdc, i c =0) --- -1.0 uadc on characteristics h fe(1) dc current gain (i c =-1.0adc...
Description PNP Silicon Plastic-Encapsulate Transistor

File Size 367.86K  /  3 Page

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    F2003

Polyfet RF Devices
Part No. F2003
OCR Text ...0V o -65 o C to 150o C 1.6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP 5WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, ...
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

File Size 36.69K  /  2 Page

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    MPSA1311

Micro Commercial Components
Part No. MPSA1311
OCR Text 1.5watts of power dissipation. ? collector- current 500ma ? collector-base voltage 30v ? operating and storage junction temperature range: -55 o c to +150 o c maximum ratings symbol rating rating unit v ces collector- emitter voltage 3...
Description NPN Silicon Darlington Transistor

File Size 301.27K  /  5 Page

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    MPSA5511

Micro Commercial Components
Part No. MPSA5511
OCR Text 1.5watts of power dissipation. ? collector- current 500ma ? collector-base voltage 80v ? operating and storage junction temperature range: -55 o c to +150 o c maximum ratings symbol rating rating unit v ceo collector- emitter voltage 80 ...
Description PNP Silicon Amplifier Transistor

File Size 207.80K  /  2 Page

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    MJE13003

Micro Commercial Components
Part No. MJE13003
OCR Text 1.5a ? collector-base voltage 700v ? operating and storage junction temperature range: -55 o c to +150 o c electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v (br)ceo collect...
Description NPN Silicon Plastic-Encapsulate Transistor

File Size 272.74K  /  3 Page

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    MCC
Part No. MJE13003
OCR Text 1.5a ? collector-base voltage 700v ? operating and storage junction temperature range: -55 o c to +150 o c electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v (br)ceo collect...
Description NPN Silicon Plastic-Encapsulate Transistor

File Size 280.04K  /  3 Page

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