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  14.40mm Datasheet PDF File

For 14.40mm Found Datasheets File :: 1467    Search Time::1.468ms    
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    IPB15N03L IPP15N03L 15N03L

INFINEON[Infineon Technologies AG]
Part No. IPB15N03L IPP15N03L 15N03L
OCR Text ...C A 0.01 10 1 1 100 100 nA m 14.9 14.5 10.3 9.9 19.9 19.6 12.9 12.6 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-s...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series

File Size 448.37K  /  8 Page

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    IPD12N03L IPU12N03L

INFINEON[Infineon Technologies AG]
http://
Part No. IPD12N03L IPU12N03L
OCR Text ...=30A RDS(on) - 11.5 14.7 m Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 8.1 10.4 1Current li...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series

File Size 151.83K  /  8 Page

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    BSS84PW

INFINEON[Infineon Technologies AG]
Part No. BSS84PW
OCR Text ...N IEC 68-1 Page 1 2000-04-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - sol...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description SIPMOS Small-Signal-Transistor

File Size 79.92K  /  8 Page

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    BSS84P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSS84P
OCR Text ... Symbol ID Value -0.17 -0.14 Unit A Pulsed drain current TA=25C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg -0.68 2.6 0.03...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description    SIPMOS Small-Signal-Transistor

File Size 86.59K  /  8 Page

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    BSO207P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSO207P
OCR Text ...D ) parameter: VGS BSO207P -14 A -12 -11 -10 Ptot = 2W i VGS [V] a -1.8 150 m c d e f g h g b c d -1.9 120 RDS(on) -2.0 -2.1 -2.2 -2.3 -2.4 -2.5 -4.5 110 100 90 80 70 60 h ID -9 -8 -7 -6 -5 -4...
Description OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8

File Size 87.24K  /  8 Page

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    BSP315P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSP315P
OCR Text ...N IEC 68-1 Page 1 1999-09-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - sol...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.80

File Size 83.18K  /  9 Page

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    ICS874004 ICS874004AG ICS874004AGT

ICST[Integrated Circuit Systems]
Part No. ICS874004 ICS874004AG ICS874004AGT
OCR Text ...2 24 23 22 21 20 19 18 17 16 15 14 13 QA0 VDDO QA1 nQA1 QB1 nQB1 nFB_IN FB_IN OEB GND nCLK CLK F_SEL PD BW_SEL 0 = ~200KHz Float = ~400KH...40mm x 7.8mm x 0.92mm package body /5 FB_OUT nFB_OUT MR PD OEB PU G Package Top View ...
Description PCI EXPRESS JITTER ATTENUATOR
High Performance Differential-to HCSL Jitter Attenuator for PCI Express?

File Size 173.99K  /  10 Page

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    SPA04N60C3 SPB04N60C3 SPP04N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA04N60C3 SPB04N60C3 SPP04N60C3
OCR Text ...15 20 35 6 2.5 58.5 9.5 max. 80 14 - Unit S pF Effective output capacitance, 5) Co(er) V DD=380V, V GS=0/10V, ID=4.5A, RG=18 - ...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description Cool MOS& Power Transistor
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 301.57K  /  14 Page

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    SPB04N60S5 SPP04N60S5

INFINEON[Infineon Technologies AG]
Part No. SPB04N60S5 SPP04N60S5
OCR Text ...=25C parameter: tp = 10 s, VGS 14 K/W A 10 0 20V 12V 10V 9.5V ZthJC 10 ID 8 10 -1 9V 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 8.5V 8V 4 7.5V 7V 6.5V 2 10 -3 ...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 320.11K  /  11 Page

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    SPB18P06P SPP18P06P

INFINEON[Infineon Technologies AG]
Part No. SPB18P06P SPP18P06P
OCR Text ... - 4.4 9.3 22 -5.56 6.6 14 33 - nC VDD = -48 , ID = -18.6 A Gate to drain charge VDD = -48 V, ID = -18.6 A Gate charge total VDD = -48 V, ID = -18.6 , V GS = 0 to -10 V Gate plateau voltage V VDD = -48 , I D = -18....
Description SIPMOS Power-Transistor

File Size 99.54K  /  9 Page

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