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10-200 Datasheet PDF File

For 10-200 Found Datasheets File :: 313741 Search Time::15.719ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK456-200 BUK456-200A BUK456-200B
OCR Text	...5 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK456-200A BUK456-200B ID = 10 A MIN. 200 2.1 TYP. 3.0 1 0.1 10 0.15 0.18 MAX. 4.0 10 1.0 100 0.16 0.20 UNIT V V A mA nA DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL gfs C...
Description	PowerMOS transistor
File Size	62.54K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G22L-200 BLF7G22LS-200
OCR Text	...smatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =1620ma; p l = 200 w (cw); f = 2110 mhz to 2170 mhz. table 6. characteristics t j = 25 ? c unless otherwise specified. symbol param...
Description	Power LDMOS transistor
File Size	150.43K / 13 Page	View it Online	Download Datasheet

				ZETTLER Electronics
Part No.	ACST-200 ACST-255-15 ACST-256-15 ACST-257-15 ACST-258-15 ACST-259-15 ACST-260-15 ACST-261-15 ACST-262-15
OCR Text	...vibration 0.062" (1.5 mm) da at 10?55 hz shock 10 g bobbin nylon 66 terminals tinned copper alloy, p.c. max. solder temp. 270c (518f) max. s...200 ? 470 ? 1000 ? output voltage example for acst-262 and different load resistors r l max 2011-...
Description	CURRENT SENSE TRANSFORMER
File Size	126.17K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	SMBYW01-200 3444 SMBYW01
OCR Text	...rent versus form factor. IM(A) 10 9 8 7 6 5 4 3 2 1 0 0.0 P=1.5W P=1.0W P=0.5W P=0.25W =1 IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 0....200 Fig. 7: Junction capacitance versus reverse voltage applied (typical values). C(pF) 12 10 8 6 ...
Description	HIGH EFFICIENCY FAST RECOVERY DIODE HIGH EFFICIENCY FAST RECOVERY DIODE From old datasheet system
File Size	58.31K / 5 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IHV-20-200 IHV-28-60
OCR Text	... (MHz) 500 200 60 150 39 92 50 10 % 10 % 10 % 10 % 10 % 10 % 10 % 0.8 1.2 1.9 2.1 2.5 2.9 3.1 0.0500 0.0210 0.0085 0.0130 0.0048 0.0075 0.0045 15 20 28 30 40 45 50 60 ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with n...
Description	Filter Inductors, High Current
File Size	80.54K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BYV32E-200 BYV32E-100 BYV32EB BYV32EB-150 BYV32E-150 BYV32EB-200 BYV32E
OCR Text	... = 25 s; = 0.5; Tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per...200 200 200 200 UNIT V V V A A A A A A C C IRRM IRSM Tstg Tj 1 It is not possible to make conn...
Description	Rectifier diodes ultrafast, rugged 20 A, 200 V, SILICON, RECTIFIER DIODE Rectifier diodes ultrafast/ rugged
File Size	52.40K / 7 Page	View it Online	Download Datasheet

				TY Semiconductor Co., L...
Part No.	SMBYW04-200
OCR Text	... v i f(rms) rms forward current 10 a i f(av) average forward current d = 0.5 dpak smc tcase = 130c tlead = 70c 4a i fsm surge non repetiti...200 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com symbol pa...
Description	HIGH EFFICIENCY FAST RECOVERY DIODE
File Size	100.08K / 3 Page	View it Online	Download Datasheet

				Vicor Corporation
Part No.	VI-200 VI-BN2-CU
OCR Text	...n =48v z =2v m =10v k =40v e = ?10 to 85c 5 v < 5 v ve = rohs b = booster v = 24 v 4 =72v y =3.3v 1 =12v 4 =48v c = ?25 to 85c u = 200 w u = 40 a 1 =24v t = 110 v 0 =5v p = 13.8 v h =52v i = ? 40 to 85c v = 150 w v = 30 a w =24v 5 = 150 v...
Description	Isolated output 50 to 200 Watts
File Size	713.39K / 6 Page	View it Online	Download Datasheet

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