1.2ghz pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MAX158 10TQC 14499DW STM6717 LHB20SA3 LT5568 GRM31C HD44H11
	Product Description
	Full Text Search

1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 324 Search Time::1.265ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Mitsubishi Electric Semiconductor
Part No.	MGF4931AM
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without pe...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	48.11K / 5 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC3918
OCR Text	...e figure at v ds = 2 v, f = 12ghz 0.7 1.2 db g a associated gain at v ds = 2 v, f = 12ghz 11 13 db p 1db output power at 1db gain compression point, f = 12ghz v ds = 4 v 16.5 g l linear power gain, f = ...
Description	Packaged Single-Bias Low Noise PHEMT GaAs FETs
File Size	225.07K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4851A
OCR Text	...=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz APPLICATION S to K band power Amplifiers Fig.1 QUALITY GRADE GG ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS Symb...
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	133.53K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4954A MGF4953A
OCR Text	... FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF4954A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary ...
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	203.88K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF1952A
OCR Text	...p=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporat...
Description	Microwave Power MES FET (Leadless Ceramic Package)
File Size	147.20K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4934AM
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without p...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	104.87K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA160A-100P
OCR Text	... 11.5db typical power gain at 12ghz ? 0.3 x 1600 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxia l heterojunction profile provides extra high power efficiency, and high reliability ele...
Description	High Efficiency Heterojunction Power FET
File Size	45.63K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA040A EPA040AV
OCR Text	...ower at 1db compression f=12ghz 24.5 24.5 p 1db vds=8v, ids=50% idss f=18ghz 22.5 24.5 22.5 24.5 dbm gain at 1db compression f=12ghz 11.5 13.5 12.0 ...
Description	High Efficiency Heterojunction Power FET
File Size	46.62K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem...
Part No.	MGF1953A
OCR Text	...p=6.0dB , P1dB=20dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITION VDS=6V, ID=100mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in you...
Description	Microwave Power MES FET
File Size	140.59K / 5 Page	View it Online	Download Datasheet

				Eudyna Devices Inc Fujitsu Media Devices Limited
Part No.	FHX06X FHX04X FHX05X
OCR Text	12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg 0.25m, Wg = 200m Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpos...
Description	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
File Size	52.84K / 4 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 324 Search Time::1.265ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |