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hitachi
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| Part No. |
HAT3008RJ
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| OCR Text |
...ature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg
Note2 Note3
Unit Pch -60 20 -3.5 -28 -3.5 V V A A A
VDSS VGSS ID I D(pul...10s, duty cycle 1 % 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW... |
| Description |
GaAlAs Infrared Emitting Diode
From old datasheet system
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| File Size |
187.97K /
15 Page |
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it Online |
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hitachi
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| Part No. |
HAT2052T
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| OCR Text |
...te1
Ratings 28 12 5.0 40 5.0 1.0 1.5 150 -55 to +150
Unit V V A A A W W C C
1. PW 10s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation ; When using the g... |
| Description |
GaAlAs Infrared Emitting Diode
From old datasheet system
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| File Size |
98.07K /
9 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAT2050T
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| OCR Text |
...utline
TSSOP-8
65 34
87
1 D
8 D
12
4 G
5 G
SS 23
SS 67
MOS1
MOS2
1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate
...10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm),... |
| Description |
Silicon N Channel Power MOS FET High Speed Power Switching
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| File Size |
56.83K /
9 Page |
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it Online |
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hitachi
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| Part No. |
HAT1025R
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| OCR Text |
...
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1025R
Absolute Maximum Ratings (Ta = 25C)
Ite...10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm),... |
| Description |
Silicon P Channel Power MOS FET
High Speed Power Switching
From old datasheet system
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| File Size |
71.11K /
9 Page |
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it Online |
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hitachi
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| Part No. |
HAT1016R
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| OCR Text |
...e)* I DR Pch*2 Pch* Tch Tstg
3 1
Ratings -30 20 -4.5 -36 -4.5 2 3 150 -55 to +150
Unit V V A A A W W C C
Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. ... |
| Description |
Silicon P Channel Power MOS FET
High Speed Power Switching
From old datasheet system
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| File Size |
112.54K /
9 Page |
View
it Online |
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Intersil Corporation
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| Part No. |
IRF730 FN1580
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| OCR Text |
1.000 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power...10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . .... |
| Description |
BEAD,FERRITE,1000 OHMS, /-25%,100MA,0603
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
From old datasheet system
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| File Size |
53.67K /
7 Page |
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it Online |
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Intersil Corporation
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| Part No. |
IRF9510 FN2214
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| OCR Text |
1.200 Ohm, P-Channel Power MOSFET
[ /Title (IRF95 10) /Subject (.0A, 00V, .200 hm, -Chanel ower OSET) /Autho () /Keyords Interil orpoation,...10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, ... |
| Description |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
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| File Size |
58.92K /
7 Page |
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it Online |
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MAXIM - Dallas Semiconductor
Maixm
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| Part No. |
MAX1730
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| OCR Text |
19-1618; Rev 0; 4/00
50mA Regulated Step-Down Charge Pump for 1.8V or 1.9V Logic
General Description
The MAX1730 regulated step-down ch...10s)......................+300C
Stresses beyond those listed under "Absolute Maximum Ratings" may... |
| Description |
50mA, Regulated, Step-Down Charge Pump for 1.8V or 1.9V Logic
50mA Regulated Step-Down Charge Pump for 1.8V or 1.9V Logic
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| File Size |
176.17K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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