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0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 319 Search Time::1.922ms
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				Mitsubishi Electric Semiconductor
Part No.	MGF4931AM
OCR Text	...noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATI...5 0.6 MAX -50 60 -1.5 -0.8 Unit V A mA V dB dB MITSUBISHI (1/5) June/2004 June/2004 ...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	48.11K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4851A
OCR Text	...D=25mA f=12GHz,Pin=-5dBm -5 35 -0.1 12 9 Limits TYP. -8 60 -0.8 14.5 11 MAX -120 -2.0 --- Unit V mA V dBm dB MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT ...
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	133.53K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4954A MGF4953A
OCR Text	...e @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF4954A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 ...5 0.40 0.60 MAX -50 60 -1.5 --0.50 0.80 -3 -15 -0.1 -12.0 --- Unit V A mA V mS dB dB dB MITSUB...
Description	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
File Size	203.88K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF1952A
OCR Text	...D=60mA f=12GHz,Pin=-5dBm -8 65 -0.3 15 5 Limits TYP. -15 120 -1.4 17 7 MAX -240 -3.5 --- Unit V mA V dBm dB MITSUBISHI (1/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1952A Microwave Power MES FET (Le...
Description	Microwave Power MES FET (Leadless Ceramic Package)
File Size	147.20K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4934AM
OCR Text	...noise figure @ f=12GHz NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICAT...5 -12 -0.1 11.5 -- Limits TYP. ----12.5 0.60 MAX -50 60 -1.5 -0.80 Unit V A mA V dB dB MITS...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	104.87K / 5 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SPF-2000
OCR Text	0.25m pHEMT. This 300m device is ideally biased at 3V,20mA for lowest noise performance. At 5V,40mA the device delivers excellent output TOI...5 0 0 5 10 15 Frequency (GHz) 20 25 30 Sym bol D e v ic e C h a r a c t e r is tic s : V d ...
Description	Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
File Size	254.56K / 3 Page	View it Online	Download Datasheet

				Tachyonics CO,. LTD
Part No.	THN6201S
OCR Text	...UE typ max 25 14 300 100 130 12 0.47 300 GHz pF Unit V V nA nA CONDITION ICE = 100uA, IE = 0 20 12 Collector-Emitter Voltage ICE = 100...5 Unit dB VCE=3V, Ic=5mA,f=2GHz VCE=3V, Ic=15mA,f=2GHz VCE=3V, Ic=5mA,f=1GHz 7.5 8.5 16 16.5 d...
Description	NPN Planer RF TRANSISTOR
File Size	138.22K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem...
Part No.	MGF1953A
OCR Text	...100mA f=12GHz,Pin=5dBm -10 105 -0.3 18 4 Limits TYP. -15 200 -1.4 20 6 MAX -400 -3.5 --- Unit V mA V dBm dB MITSUBISHI (1/5) Aug. /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1953A Microwave Power MES FET (Le...
Description	Microwave Power MES FET
File Size	140.59K / 5 Page	View it Online	Download Datasheet

				Eudyna Devices Inc Fujitsu Media Devices Limited
Part No.	FHX06X FHX04X FHX05X
OCR Text	0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg 0.25m, Wg = 200m Gold Gate Metallization for High Reliability ...5 -3.0 180 -65 to +175 175 Unit V V mW C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=...
Description	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
File Size	52.84K / 4 Page	View it Online	Download Datasheet

For 0.5-12ghz Found Datasheets File :: 319 Search Time::1.922ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |