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  0.052 Datasheet PDF File

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    Microsemi
Part No. APT68GA60LD40
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 typical applications zvs phase shifted and other full bridge half ...052-6341 rev f 6 - 2011 thermal and mechanical characteristics dynamic characteristics ...
Description IGBT w/ anti-parallel diode

File Size 221.08K  /  9 Page

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    Microsemi
Part No. APT68GA60B APT68GA60S
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full...052-6326 rev d 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 ...
Description IGBT w/o anti-parallel diode

File Size 181.88K  /  6 Page

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    Microsemi
Part No. APT60GA60JD60
OCR Text ... i c = 62a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 2.5ma 3 4.5 6 i ces zero...052-6340 rev d 6 - 2011 thermal and mechanical characteristics dynamic characteristics t j = 2...
Description IGBT w/ anti-parallel diode

File Size 216.96K  /  9 Page

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    Microsemi
Part No. APT54GA60B APT54GA60S
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full...052-6328 rev e 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repe...
Description IGBT w/o anti-parallel diode

File Size 184.61K  /  6 Page

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    Microsemi
Part No. APT47GA60JD40
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications zvs phase shifted and oth...052-6338 rev c 6 - 2011 thermal and mechanical characteristics dynamic characteristics t j = ...
Description IGBT w/ anti-parallel diode

File Size 218.61K  /  9 Page

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    Microsemi
Part No. APT44GA60S
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full...052-6333 rev d 5 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repe...
Description IGBT w/o anti-parallel diode

File Size 188.49K  /  6 Page

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    Microsemi
Part No. APT36GA60S APT36GA60B
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full...052-6327 rev c 5 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repe...
Description IGBT w/o anti-parallel diode

File Size 186.52K  /  6 Page

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    Microsemi
Part No. APT102GA60L APT102GA60B2
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full...052-6329 rev c 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 c...
Description IGBT w/o anti-parallel diode

File Size 201.08K  /  6 Page

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    Microsemi
Part No. APT95GR65JDU60
OCR Text ... max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speciie...052-6437 rev a 7-2014 apt95gr65jdu60 thermal and mechanical characteristics dynamic characteri...
Description NPT IGBT & Trench IGBT

File Size 388.31K  /  8 Page

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    Microsemi
Part No. APT60GF120JRDQ3
OCR Text ... 4.5 5.5 6.5 2.5 3.0 3.1 0.35 3.0 100 the fast igbt is a new generation of high voltage power igbts. us...052-6287 rev a 4-2006 apt60gf120jrdq3 dynamic characteristics symbol c ies c oes c res v gep...
Description IGBT w/ anti-parallel diode

File Size 269.25K  /  9 Page

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