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SEMICOA[Semicoa Semiconductor]
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| Part No. |
2N2368 2N4449 2N3227 2C2369A 2N2369A
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| OCR Text |
...EBO
Test conditions
IC = 10.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0
Min
15 40 4.5
Max
----10
Unit
V dc V dc V dc
hFE IC = 10 mA dc, VCE = 0.35 V 40 ----Due to limitations of probe testing, only dc parameters are ... |
| Description |
Chip Type 2C2369A Geometry 0005 Polarity NPN
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| File Size |
28.91K /
1 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
2N3251 2N3251A JAN2N3251A
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| OCR Text |
...VCBO VEBO IC PD MAX. -60 -60 -5.0 -200 0.36 2.4 PD 1.2 8 -65 to +175 -65 to +175 417 146 Watts o mW/ C o C
o o o
UNIT Vdc Vdc Vdc mAdc Watts o mW/ C
TJ TS RJA RJC
C
C/W C/W
Mechanical Outline
Datasheet# MSC0281A 5/19/97
... |
| Description |
PNP Transistor
PNP BIPOLAR TRANSISTOR
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| File Size |
64.21K /
2 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
2N3868
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| OCR Text |
...aturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
Silicon PNP Power Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.... |
| Description |
Silicon PNP Power Transistors
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| File Size |
55.07K /
3 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
2N5416 2N5415 5233
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| OCR Text |
...5 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 C
o
Value 2N5416 -350 -300 -6 -1 -0.5 10 1 -65 to 200 200 -200 -200 -4
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| Description |
From old datasheet system
SILICON PNP TRANSISTORS
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| File Size |
65.85K /
4 Page |
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Vishay Intertechnology, Inc.
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| Part No. |
2N5566 2N5565 2N5564 70254
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| OCR Text |
0.5 to -3 -0.5 to -3 -0.5 to -3
V(BR)GSS Min (V)
-40 -40 -40
gfs Min (mS)
7.5 7.5 7.5
IG Typ (pA)
-3 -3 -3
jVGS1 - VGS2j Max (mV)
5 10 20
Features
D D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low... |
| Description |
Matched N-Channel JFET Pairs(最小栅源击穿电40V，栅极工作电3pA的N沟道结型场效应管) 匹配N沟道场效应对（最小栅源击穿电 40V的，栅极工作电流pA的N沟道结型场效应管
From old datasheet system
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| File Size |
46.03K /
5 Page |
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SEMELAB
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| Part No. |
2N6258
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| OCR Text |
0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.... |
| Description |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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| File Size |
10.66K /
1 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
2N6667 ON0103
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| OCR Text |
...RES 60 - 80 VOLTS 65 WATTS
2 0.016
65 0.52
250
10 15
5
2N6667 2N6668
(See 2N3773)
CASE 221A-06 TO-220AB
Order this document by 2N6667/D
2N6609
62.5
1.92
Max
2N6668
80
80
mAdc
Watts W/_C
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| Description |
DARLINGTON POWER TRANSISTORS(PNP SILICON )
From old datasheet system
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| File Size |
167.86K /
6 Page |
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Price and Availability
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