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  0-20v Datasheet PDF File

For 0-20v Found Datasheets File :: 42970    Search Time::1.422ms    
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    KF60BD-TR

STMICROELECTRONICS
Part No. KF60BD-TR
OCR Text 0.4v) very low quiescent current (typ. 50 a in off mode, 500 a in on mode) output current up to 500 ma logic-controlled electronic shutd...20v, i o = 0ma on mode 0.5 1 ma v i = 2.8 to 20v, i o =500ma 12 v i = 6 v off mode 50 100 a svr...
Description 6 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PDSO8

File Size 291.68K  /  22 Page

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    CHM8938JPT

Chenmko Enterprise Co. Ltd.
Chenmko Enterprise Co. ...
Part No. CHM8938JPT
OCR Text ..., junction-to-ambient 62.5 7.0 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , dut...20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold volta...
Description Dual Enhancement Mode Field Effect Transistor

File Size 300.96K  /  3 Page

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    2SD1051

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1051
OCR Text ... to 2SB819 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05...20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = IC =...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 39.28K  /  2 Page

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    AP4410AGM-HF14

Advanced Power Electronics Corp.
Part No. AP4410AGM-HF14
OCR Text ...e recovery time i s =9a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. jun...20v 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss ...
Description Simple Drive Requirement

File Size 54.82K  /  4 Page

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    DnI
Part No. DFP75N75
OCR Text ... (note 3) 7.0 v/ns p d total power dissipation(@t c = 25 c) 176 w derating factor above...20v, v ds = 0v 100 na gate-source leakage, reverse v gs = -20v, v ds = 0v - - -100 na on charac...
Description N-Channel MOSFET

File Size 752.76K  /  7 Page

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    SSG4510

SeCoS Halbleitertechnologie GmbH
Part No. SSG4510
OCR Text ... max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1...20v drain-source leakage current t j =25 c i dss - - 1 a v ds =80v, v gs =0 t j =55 c ...
Description N & P-Ch Enhancement Mode Power MOSFET

File Size 1,077.48K  /  7 Page

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    PMN25UN

NXP Semiconductors
Part No. PMN25UN
OCR Text ...5 017aaa123 40 80 120 p der (%) 0 t j (c) ?75 175 125 25 75 ?25 017aaa124 40 80 120 i der (%) 0 pmn25un all information provided in this ...20v; v gs =0v; t j =25c --1a v ds =20v; v gs =0v; t j =150c --25a i gss gate leakage current v gs =8...
Description 20 V, 6 A N-channel Trench MOSFET

File Size 807.63K  /  16 Page

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    IHW20N65R5

Infineon Technologies AG
Part No. IHW20N65R5
OCR Text ...x t c =25c t c =100c i c 40.0 20.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 60.0 a turn off safe operating area v c...20v - - 100 na transconductance g fs v ce =20v, i c =20.0a - 60.0 - s integrated gate resistor ...
Description high power thyristor diode

File Size 2,024.06K  /  15 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
OCR Text ...x t c =25c t c =100c i c 40.0 20.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 60.0 a turnoffsafeoperatingarea v ...20v - - 100 na transconductance g fs v ce =20v, i c =20.0a - 14.8 - s integrated gate resistor ...
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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