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				SILICON STORAGE TECHNOLOGY INC
Part No.	SST34HF3242C-70-4E-L1PE
OCR Text	...nk can be erased and programmed word-by-word in typ- ically 4 seconds for the sst34hf32x2xc/32x4x, when using interface features such as toggle bit, data# polling, 32 mbit concurrent superflash + 4/8 mbit (p)sram combomemory sst34hf3242c / ...
Description	SPECIALTY MEMORY CIRCUIT, PBGA56
File Size	504.74K / 40 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...6 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)Byte - X16 device(K9F5616X0C) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0C) : (512 + 16)Byte - X16 device(K9F5616X0C) : ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...6 device(K9F5616X0B) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0B) : (16K + 512)Byte - X16 device(K9F5616X0B) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0B) : (512 + 16)Byte - X16 device(K9F5616X0B) : ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	...6 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)Byte - X16 device(K9F5616X0C) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0C) : (512 + 16)Byte - X16 device(K9F5616X0C) : ...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				SPANSION LLC
Part No.	S98WS064RBOHI0023
OCR Text	...age mode read access ? flash: 8-word page with page access time of 20 ns ? cellularram: 16-word page with page access time of 20 ns for detailed specifications, please refer to the individual data sheets: s98ws064rb0hi001, -002 stacked mult...
Description	SPECIALTY MEMORY CIRCUIT, PBGA88
File Size	310.28K / 10 Page	View it Online	Download Datasheet

				MACRONIX INTERNATIONAL CO LTD
Part No.	MX29LV800ATMI-90
OCR Text	...nd register architecture - byte/word programming (9us/11us typical) - sector erase (sector structure 16k-bytex1, 8k-bytex2, 32k-bytex1, and 64k-byte x15) ? auto erase (chip & sector) and auto program - automatically erase any combination of...
Description	512K X 16 FLASH 3V PROM, 90 ns, PDSO48
File Size	1,501.33K / 66 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W640DB70ZA1F M29W640DB70ZA1T M29W640DB70ZA6E M29W640DB70ZA6F M29W640DB70ZA6T M29W640DB90N1E M29W640DB90N1F M29W640DB90N1T M29W640DB90N6E M29W640DB90N6F M29W640DB90N6T M29W640DB90ZA1E M29W640DB90ZA1F M29W640DB90ZA1T M29W640DB90ZA6E M29W640DB90ZA6F M29W640DB90ZA6T M29W640DT M29W640DT70N1E M29W640DT70N1F M29W640DT70N1T M29W640DT70N6E M29W640DT70N6F M29W640DT70N6T M29W640DT70ZA1E M29W640DT70ZA1F M29W640DT70ZA1T M29W640DT70ZA6E M29W640DT70ZA6F M29W640DT70ZA6T M29W640DT90N1E M29W640DT90N1F M29W640DT90N1T M29W640DT90N6E M29W640DT90N6F M29W640DT90N6T M29W640DT90ZA1E M29W640DT90ZA1F M29W640DT90ZA1T M29W640DT90ZA6E M29W640DT90ZA6F M29W640DT90ZA6T
OCR Text	...ROGRAMMING TIME - 10 s per Byte/Word typical - Double Word Programming Option s 135 MEMORY BLOCKS - 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) - 127 Main Blocks, 64 KBytes each TSOP48 (N) 12 x 20mm ...
Description	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
File Size	381.58K / 50 Page	View it Online	Download Datasheet

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