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GE[General Semiconductor]
GE Security, Inc.
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| Part No. |
BS223
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| OCR Text |
...
Unit V V V A mW C C
-VDSS -vdgs VGS -ID Ptot Tj TS
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage D... |
| Description |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
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| File Size |
36.85K /
2 Page |
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DIODES[Diodes Incorporated]
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| Part No. |
BS250
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| OCR Text |
...ed Characteristic Symbol -VDSS -vdgs VGS -ID Pd Tj, TSTG Value 60 60 20 250 830 -55 +150 Unit V V V mA mW C
Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Operating and Storage Temperature Ra... |
| Description |
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
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| File Size |
60.79K /
2 Page |
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it Online |
Download Datasheet |
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DIODES[Diodes Incorporated]
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| Part No. |
BS807
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| OCR Text |
...otherwise specified Symbol VDSS vdgs VGS ID Pd Tj, TSTG Value 200 200 20 100 310 -55 to +150 Unit V V V mA mW C
Characteristic
Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50C (Note 1) Oper... |
| Description |
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
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| File Size |
61.56K /
3 Page |
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GE[General Semiconductor]
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| Part No. |
BS828
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| OCR Text |
...
Unit V V V mA W C C
VDSS vdgs VGS ID Ptot Tj TS
Device on fiberglass substrate, see layout
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 C IF V... |
| Description |
DMOS Transistors (N-Channel)
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| File Size |
236.82K /
5 Page |
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it Online |
Download Datasheet |
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GE Security, Inc.
GE[General Semiconductor]
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| Part No. |
BS829
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| OCR Text |
...
Unit V V V mA mW C C
-VDSS -vdgs VGS - ID Ptot Tj TS
Device on fiberglass substrate, see layout
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0 V, IF = 350 mA, Tj = 25 C... |
| Description |
DMOS Transistors (P-Channel)(P???DMOS?朵?绠?
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| File Size |
49.12K /
2 Page |
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it Online |
Download Datasheet |
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GE Security, Inc.
GE[General Semiconductor]
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| Part No. |
BS850
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| OCR Text |
...
Unit V V V mA W C C
-VDSS -vdgs VGS -ID Ptot Tj TS
Device on fiberglass substrate, see layout
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.12 A, Tj = 25 C IF... |
| Description |
DMOS Transistors (P-Channel)(P通道DMOS晶体 DMOS晶体管（P沟道）性（P通道的DMOS晶体管）
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| File Size |
246.77K /
5 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
BS870
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| OCR Text |
...
Unit V V V mA W C C
VDSS vdgs VGS ID Ptot Tj TS
Device on fiberglass substrate, see layout
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 C
4/9... |
| Description |
DMOS Transistors (N-Channel)
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| File Size |
235.02K /
5 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK7C10-75AITE BUK7C10_75AITE-02
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| OCR Text |
... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) pe... |
| Description |
From old datasheet system
TrenchPLUS standard level FET
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| File Size |
135.31K /
15 Page |
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LRC[Leshan Radio Company]
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| Part No. |
LMBF170LT3G LMBF170LT1 LMBF170LT1G LMBF170LT3
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| OCR Text |
...Continuous - Pulsed Symbol VDSS vdgs VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, J... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
96.88K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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