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ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STE70IE120
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Description |
Monolithic Emitter Switched Bipolar transistor ESBT? 1200 V - 70 A - 0.014 Ω Power module Monolithic Emitter Switched Bipolar transistor ESBT 1200V 70A 0.014Ohm Power module Monolithic Emitter Switched Bipolar transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power module
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File Size |
127.05K /
7 Page |
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Analog Devices, Inc.
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Part No. |
EVK75-050 2DI75S050A
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Description |
transistor | BJT POWER module | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs transistor | BJT POWER module | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五(巴西)总裁| 75
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File Size |
51.39K /
1 Page |
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9315TMI-2.7 X9315TMIZ X9315TMIZ-2.7 X9315TMZ X9315TMZ-2.7 X9315TP X9315TP-2.7 X9315TPI X9315TPI-2.7 X9315TS X9315TS-2.7 X9315TSI X9315TSI-2.7 X9315TSIZ X9315TSIZ-2.7 X9315TSZ X9315TSZ-2.7 X9315UM X9315UM-2.7 X9315UMI X9315UMI-2.7 X9315UMIZ X9315UMIZ-2.7 X9315UMZ X9315UMZ-2.7 X9315UP X9315UP-2.7 X9315UPI X9315UPI-2.7 X9315US X9315US-2.7 X9315USI X9315USI-2.7 X9315USIZ X9315USIZ-2.7 X9315USZ X9315USZ-2.7 X9315WM X9315WM-2.7 X9315WMI X9315WMI-2.7 X9315WMIZ X9315WMZ X9315WMZ-2.7 X9315WP X9315WP-2.7 X9315WPI X9315WPI-2.7 X9315WS X9315WS-2.7 X9315WSI X9315WSI-2.7 X9315WSIZ X9315WSIZ-2.7 X9315WSZ X9315WMIZ-2.7
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Description |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR module, 3 PHASETHYRISTOR module, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT module, H BRIDGE 1200VIGBT module, H BRIDGE 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT module, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT module, CHOPPER 1200VIGBT module, CHOPPER 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT module 6 PACK 114A 1200V TRENCHIGBT module 6 PACK 114A 1200V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT module, 6 PACK 1200VIGBT module, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT module, DUAL 1200VIGBT module, DUAL 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET module, 6 PACK 75VMOSFET module, 6 PACK 75V; transistor type:MOSFET; transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT module, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT module 6 PACK 96A 600V TRENCHIGBT module 6 PACK 96A 600V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT module, 6 PACK 1200VIGBT module, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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File Size |
333.42K /
14 Page |
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EPCOS AG Electronic Theatre Controls, Inc.
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Part No. |
DE375-301N40-00 DE150-102N02-00
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Description |
transistor | MOSFET POWER module | INDEPENDENT | 300V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 40A条(丁) transistor | MOSFET POWER module | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直|甲(丁)
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File Size |
60.68K /
2 Page |
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Electronic Theatre Controls, Inc.
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Part No. |
CPW256A CPW255A
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Description |
transistor | MOSFET POWER module | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五(巴西)直| 17.5AI(四 transistor | MOSFET POWER module | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
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File Size |
124.45K /
2 Page |
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it Online |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
PMEM4020PD PMEM4020PD115
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Description |
PNP transistor/Schottky-diode module; Package: SOT457 (SC-74); Container: Tape reel smd 1300 mA, 40 V, PNP, Si, SMALL SIGNAL transistor
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File Size |
71.96K /
11 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
MP4025
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Description |
Power transistor module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
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File Size |
56.82K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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