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Micron Technology, Inc.
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| Part No. |
MT4LDT464HX
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| OCR Text |
...e mode access cycles optional self refresh mode (s) serial presence-detect (spd) options marking package 144-pin sodimm (gold) g timing 50ns access -5 60ns access -6 access cycles fast page mode none edo page mode x refresh rate... |
| Description |
SMALL-OUTLINE DRAM MODULE
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| File Size |
618.85K /
32 Page |
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it Online |
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| Part No. |
MT48V4M32LFF5-10XTG
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| OCR Text |
...tures ? temperature-compensated self refresh (tcsr) ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operatio n; column address can be changed every clock cycle ? internal banks for hiding ... |
| Description |
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
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| File Size |
2,701.10K /
79 Page |
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it Online |
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| Part No. |
MT48LC8M16TG-8ITG MT48V8M16TG-8G
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| OCR Text |
...tures ? temperature compensated self refresh (tcsr) ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operat ion; column address can be changed every clock cycle ? internal banks for hiding ... |
| Description |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
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| File Size |
6,168.33K /
69 Page |
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| Part No. |
MT48LC16M32L2F5-10
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| OCR Text |
...ge power supply ? partial array self refresh power-saving mode ? temperature compensated self refresh (tcsr) ? deep power-down mode ? programmable output drive strength ? fully synchronous; all signals registered on positive edge of system... |
| Description |
16M X 32 SYNCHRONOUS DRAM, PBGA90
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| File Size |
248.66K /
10 Page |
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it Online |
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| Part No. |
K4E151611C-TC50
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| OCR Text |
...resh capabilities. furthermore, self- refresh operation is available in l-version. this 1mx16 edo mode dram family is fabricated using samsung s advanced cmos pro- cess to realize high band-width, low power consumption and high reliabilit... |
| Description |
1M X 16 EDO DRAM, 50 ns, PDSO44
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| File Size |
558.18K /
35 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS42SM32400E-75EBLI
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| OCR Text |
... tcsr (temperature compensated self refresh) ? pasr (partial arrays self refresh): 1/16, 1/8, ? 1/4, 1/2, and full deep power down mode (dpd) ? driver strength control (ds): 1/4, 1/2, and full ? options confgurations: ? - 16m... |
| Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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| File Size |
764.69K /
26 Page |
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it Online |
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| Part No. |
HYM71V16735AT8-K
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| OCR Text |
...hysical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ... |
| Description |
x72 SDRAM Module
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| File Size |
211.45K /
14 Page |
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it Online |
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Price and Availability
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