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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N60u_D ON1858 MGP15N60u ON1857
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vd...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.67K /
5 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP7N60E_D ON1878 MGP7N60E ON1875
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
114.34K /
5 Page |
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it Online |
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hitachi
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| Part No. |
2SK2940
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| OCR Text |
...Tc = 25C 3. Value at Tch = 25C, Rg 50
2
2SK2940(L), 2SK2940(S)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 -- -- 1....303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Te... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
73.98K /
10 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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it Online |
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hitachi
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| Part No. |
HAT1036R
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| OCR Text |
....2
V GS = -4 V, V = -10 V DS RG = 50 , duty < 1 % -0.5 -1 -2 -5 -10 -20 Drain Current I D (A)
6
HAT1036R
Reverse Drain Current vs...303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen,... |
| Description |
Silicon N Channel Power MOS FET
High Speed Power Switching
From old datasheet system
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| File Size |
67.37K /
10 Page |
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it Online |
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Holtek Semiconductor Inc.
HOLTEK[Holtek Semiconductor Inc]
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| Part No. |
HT672B
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| OCR Text |
... with a microcontroller.
E n e rg y
The HT672B has a built-in internal Voltage Limiter to prevent excess power supply and RF levels induced by the LC tank from damaging the device or causing the device to function abnormally. A total of... |
| Description |
13.56MHz RFID Transponder
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| File Size |
125.25K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N60u_D ON1866 MGP20N60u ON1865
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.77K /
5 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW20N120_D ON1922 MGW20N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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| File Size |
135.63K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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