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ST Microelectronics
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| Part No. |
STB22NE03L
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| OCR Text |
...c 16 a i dm ( ) drain current (pulsed) 88 a p tot total dissipation at t c = 25c 60 w derating factor 0.4 w/c dv/dt (1) peak diode recove...load, see fig.5) 13 33 55 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (... |
| Description |
N-CHANNEL 30V - 0.034 OHM - 22A D2PAK STRIPFET POWER MOSFET
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| File Size |
119.60K /
6 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC191507FC
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| OCR Text |
...nd output matching ? typical pulsed cw performance, 1990 mhz, 28 v, 10 s pulse width, 10% duty cycle, class ab test - output power at ...load g s d load pull performance main side load pull performance C pulsed cw signal: 100 s, 10% dut... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
367.13K /
7 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC191507FCV1R250XTMA1
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| OCR Text |
...nd output matching ? typical pulsed cw performance, 1990 mhz, 28 v, 10 s pulse width, 10% duty cycle, class ab test - output power at ...load g s d load pull performance main side load pull performance C pulsed cw signal: 100 s, 10% dut... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
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| File Size |
365.01K /
7 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STU3N80K5
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| OCR Text |
... operating area. drain current (pulsed) 10 a p tot total dissipation at t c = 25 c 60 20 60 60 w i ar max current during repetitive or si...load figure 19. gate charge test circuit figure 20. test circuit for inductive l... |
| Description |
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,555.17K /
23 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STS4NF100
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| OCR Text |
...5 a a i dm ( ? ) drain current (pulsed) 16 a p tot total dissipation at t c =25 c 2.5 w internal schematic diagram
sts4nf100 2/8 thermal ...load, figure 3) 58 45 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v d... |
| Description |
N-CHANNEL 100V - 0.065 OHM - 4A SO-8 STRIPFET II POWER MOSFET
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| File Size |
82.96K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STS6NF20V
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| OCR Text |
...3.8 a i dm ( ? ) drain current (pulsed) 24 a p tot total dissipation at t c =25 c 2.5 w internal schematic diagram
sts6nf20v 2/8 thermal ...load, figure 1) 7 33 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd... |
| Description |
N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
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| File Size |
80.02K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
IRF620FI
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| OCR Text |
...*) a i dm ( l ) drain current (pulsed) 24 24 a p tot total dissipation at t c = 25c 70 30 w derating factor 0.56 0.24 w/c dv/dt (1) peak d...load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inducti... |
| Description |
OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN
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| File Size |
326.19K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW8NB100
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| OCR Text |
...os) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature ...Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For R... |
| Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
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| File Size |
253.36K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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