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				Electronic Theatre Controls, Inc.
Part No.	GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS8170LW36C-300 GS8170LW36C-200 GS8170LW72C-250 GS8170LW72C-333 GS8170LW36C-333 GS8170LW36C-200I GS8170LW36C-333I GS8170LW36C-300I GS8170LW72C-200I GS8170LW36C-250I GS8170LW72C-300I
OCR Text	late write sigmaram? 200 mhz?333 mhz 1.8 v v dd 1.8 v i/o 209-bump bga commercial temp industrial temp rev: 2.03 1/2005 1/27 ? 2002, gsi technology, inc. specifications cited are subject to change without notice . for latest documentation...
Description	Low-Noise Operational Amplifier 8-SOIC -40 to 85 18Mb sigma 1x1Lp CMOS I/O late Write SigmaRAM Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
File Size	644.74K / 27 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 GS8330LW36C-200I GS8330LW72C-250I
OCR Text	late Write SigmaRAMTM 200 MHz-250 MHz 1.8 V VDD 1.8 V I/O Features * late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.8 V CMOS Interface * ZQ controlled us...
Description	36Mb x1Lp CMOS I/O late Write SigmaRAM 512K X 72 late-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O late Write SigmaRAM
File Size	582.75K / 30 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS8170DW72C-200 GS8170DW72C-300I GS8170DW36C-333 GS8170DW36C-333I GS8170DW72C-200I GS8170DW36C-300 GS8170DW36C-300I GS8170DW36C-200 GS8170DW72C-333I GS8170DW36C-200I GS8170DW72C-333IT
OCR Text	late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.5 V or 1.8 V CMOS Interface * ZQ controlled user-selectable output drive strength * Dual Cycle Deselect * Burst R...
Description	256K X 72 STANDARD SRAM, 1.8 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double late Write SigmaRAM
File Size	817.55K / 27 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	AN1360
OCR Text	... as BDIP in normal assertion. A late BDIP can be also used (in this case flash OE can be connected to micro OE). Figure 4 shows a burst read at 56 MHz. The Burst Configuration Register of the M58BW016B/D (bits 13:11) is set to `1,0,0,2' in ...
Description	CONNECTING THE MPC56X SPANISH OAK MICROCONTROLLER TO THE M58BW016B/D FLASH MEMORY
File Size	58.47K / 10 Page	View it Online	Download Datasheet

				IBM Microeletronics International Business Machines, Corp. Advanced Interconnections, Corp.
Part No.	IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM0418A86SQKA-6 IBM0418A86LQKA-7 IBM0418A86LQKA-7F IBM0436A86LQKA-7F IBM0436A86LQKA-6 IBM0436A86SQKA-10 IBM0436A86SQKA-7F IBM0418A86SQKA-10
OCR Text	... with fully coherent Self-Timed late-late-Write * Sleep mode, for reduced stand-by power * 100-pin TQFP package * 3.3 V (SQKA) or 2.5 V (LQKA) power supply and I/O * LVTTL input and output levels * 256K x 36 or 512K x 18 organization * Regi...
Description	8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存） x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
File Size	152.39K / 17 Page	View it Online	Download Datasheet

				Amphenol, Corp.
Part No.	IBM0418A81QLAB-4 IBM0418A81QLAB-3 IBM0418A81QLAB-5 IBM0418A41QLAB-5 IBM0418A41QLAB-3P IBM0418A41QLAB-3F IBM0418A41QLAB-3N IBM0418A41QLAB-4 IBM0436A41QLAB-3F IBM0436A81QLAB-3F
OCR Text	...de of Operation with Self-Timed late Write * Single Differential Extended HSTL Clock * +3.3V Power Supply, Ground, 1.5V VDDQ, and 0.75V VREF * HSTL Input and Output levels * Registered Addresses, Write Enables, Synchronous Select, and Data ...
Description	x36 Fast Synchronous SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
File Size	145.05K / 26 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc.
Part No.	IBM0418A81MLAB-4 IBM0418A81MLAB-5 IBM0418A81MLAB-3 IBM0436A81MLAB-3F IBM0436A41MLAB-3F IBM0418A41MLAB-3F IBM0418A81MLAB-3F
OCR Text	...de of Operation with Self-Timed late Write * Differential Clocks * +3.3V Power Supply, Ground, 2.0V VDDQ * 2.0V LVTTL Input and Output levels * Registered Addresses, Write Enables, Synchronous Select, and Data Ins * Registered Outputs * 40 ...
Description	x36 Fast Synchronous SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
File Size	136.72K / 25 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp.
Part No.	IBM0418A81DLAB-5 IBM0418A81DLAB-4 IBM0418A81DLAB-3 IBM0436A81DLAB-3F IBM0436A41DLAB-3F IBM0418A41DLAB-3F IBM0418A41DLAB-5
OCR Text	...de of Operation with Self-Timed late Write * Single Differential HSTL Clock * +3.3V Power Supply, Ground, 2.1V VDDQ , and 1.0V VREF * HSTL Input and Output levels * Registered Addresses, Write Enables, Synchronous Select, and Data Ins * Reg...
Description	x36 Fast Synchronous SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
File Size	203.06K / 25 Page	View it Online	Download Datasheet

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