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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH426 SFH421 Q62703-P0331 Q62702-P1055
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| OCR Text |
ir-lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7
SFH 421 SFH 426
fpl06724
3.4 3.0
2.4
0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g
1.1 0.5
0.18 ... |
| Description |
GaAlAs-ir-lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode，在SMT Geh锓包GaAlA红外发射
GaAlAs-ir-lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
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| File Size |
52.40K /
5 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SFH4205 Q62702-P5165 Q62702-P978 SFH4200
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| OCR Text |
ir-lumineszenzdiode (950 nm) High-Speed GaAs Infrared Emitter (950 nm) SFH 4200 SFH 4205
SFH 4200
SFH 4205
Wesentliche Merkmale * GaAs-LED mit sehr hohem Wirkungsgrad * Gleichstrom- (mit Modulation) oder Impulsbetrieb moglich * Hoh... |
| Description |
Schnelle GaAs-ir-lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
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| File Size |
64.89K /
7 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH464E7800 SFH464 Q62702-Q1745
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| OCR Text |
...g im sichtbaren Rotbereich ohne IR-
Features Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidi... |
| Description |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
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| File Size |
39.47K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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