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SGS Thomson Microelectronics
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| Part No. |
AN1049
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| OCR Text |
...eration, can be expressed as: p insb = 1 2 ? l p ? f osc ? ? ? ? 0.367 - v o r s ? ? ? 2 (8). the standby power can be expressed also in terms of the maximum input power (p inmax ). this is set by the sense resistor r s , which is selected ... |
| Description |
MINIMIZE POWER LOSSES OF LIGHTLY LOADED FLY BACK CONVERTERS WITH THE L5991 PWM CONTROLLERS
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| File Size |
218.60K /
24 Page |
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q65420-L90 FP420L90 Q65420-L0090E001
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| OCR Text |
...s of magneto resistors, (L-type insb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier ... |
| Description |
From old datasheet system
Double Differential Magneto Resistor
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| File Size |
206.58K /
4 Page |
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it Online |
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Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q65412-L100 FP412L100 FP412L10
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| OCR Text |
...ally variable resistor in Ltype insb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of each of the magneto resistors is 100 . The se... |
| Description |
Differential Magneto Resistor
From old datasheet system
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| File Size |
188.23K /
3 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q65410-L80E FP410L FP410L_4X80FM Q65110-L80F FP410L4X80FM FP410LFM
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| OCR Text |
...s of magneto resistors, (L-type insb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier ... |
| Description |
From old datasheet system
Double Differential Magneto Resistor 双差分磁电阻
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| File Size |
201.77K /
4 Page |
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it Online |
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Asahi Kasei
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| Part No. |
EW-412 EW-512
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| OCR Text |
...posed of a Ultla-high sensitive insb Hall element and a signal processing IC chip in a package. ASAHI KASEI ELECTRONICS Hall Effect ICs have high sensitivity and good stability.
FEATURES
High Sensitivity (Bop:1mT to 6mT) 4.5V to 18V Ope... |
| Description |
(EW-412 / EW-512) Bipolar Hall Effect Latches
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| File Size |
75.95K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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