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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	............................. 0.80 ID ............................................................................................ 7A Viso .......1.90 3.5 370 80 16 15 22 50 26 1.5 -- Max. -- -- 10 1 4 0.80 2.40 -- -- -- -- -- -- -- -- 2.0 4.17 ...
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , ICollector-to-Emitter Current) (A) C ,...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...ted vo ltag e I 40 20 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...ted vo ltag e I 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 1000 I C , Collector Current (A) TJ = ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...r b o th : 70 60 50 40 30 20 Id e a l d io d e s 10 0 0.1 1 10 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 83 W S q u a re w a v e : 60 % o...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	INA-01170
OCR Text	...Parameters and Test Conditions: Id = 35 mA, ZO = 50 Power Gain (\|S21\| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (\|S12\| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point...
Description	Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
File Size	43.00K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...owprofile applications. S ID = 84A D2Pak IRF1010ES TO-262 IRF1010EL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ T...1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...S = 60V RDS(on) = 12m G S ID = 84A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced proc...1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...for lowprofile applications. ID = 85A D 2 P ak T O -26 2 IRF1010NS IRF1010NL Absolute Maximum Ratings Parameter ID @ TC ...1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...S = 55V RDS(on) = 11m G S ID = 85A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced proc...1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

For id-1 Found Datasheets File :: 66514 Search Time::1.891ms
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