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  heterostructure Datasheet PDF File

For heterostructure Found Datasheets File :: 131    Search Time::1.656ms    
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    SGA-0363

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. SGA-0363
OCR Text ...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well a...
Description DC 5000 MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK

File Size 258.78K  /  5 Page

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    SGA-8343X

STANFORD[Stanford Microdevices]
Part No. SGA-8343X
OCR Text ...h performance Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device ...
Description Reliability Qualification Report 可靠性鉴定报

File Size 173.86K  /  9 Page

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    SGA-8343Z SGA-8343

Stanford Microdevices
SIRENZA[SIRENZA MICRODEVICES]
Part No. SGA-8343Z SGA-8343
OCR Text heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and e...
Description Low Noise, High Gain SiGe HBT

File Size 92.58K  /  4 Page

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    FU-627SHL-6M22

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. FU-627SHL-6M22
OCR Text ...**Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS Parameter Laser diode Reverse voltage Forword current Operating case temperature Storage temperature (Tc=25 C) Symbol Vrl Ifl Tc Tstg Conditi...
Description 1.55um LD MODULE WITH SINGLEMODE FIBER PIGTAIL 1.55um劳工处模块,单模光纤尾纤

File Size 34.09K  /  3 Page

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    SGA-6589

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. SGA-6589
OCR Text ...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well a...
Description RELAY BASE
DC 4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK

File Size 565.19K  /  8 Page

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    HL6712G

Hitachi Semiconductor
Part No. HL6712G
OCR Text heterostructure. It is suitable as light sources for barcode readers, levelers, laser printers, and various other types of optical equipment. Hermetic sealing of the packages assure high reliability. Features * * * * * * Visible light o...
Description From old datasheet system
0.67 um band AlGaInP index-guided laser diode with a double heterostructure

File Size 22.18K  /  5 Page

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    WJCI[WJ Communication. Inc.]
Part No. FP1189-G FP1189-PCB900S FP1189 FP1189-PCB1900S FP1189-PCB2140S
OCR Text ...high performance 1/2-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB ...
Description ?-Watt HFET
?-Watt HFET

File Size 384.84K  /  11 Page

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    FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S FP1189-RFID FP1189

WJ Communication. Inc.
Part No. FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S FP1189-RFID FP1189
OCR Text ...high performance 1/2-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1 -dB...
Description 1/2 - Watt HFET

File Size 514.21K  /  12 Page

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    FP2189-PCB1900S FP2189-PCB2140S FP2189 FP2189-PCB900S

Electronic Theatre Controls, Inc.
WJ Communications
ETC[ETC]
List of Unclassifed Manufacturers
Part No. FP2189-PCB1900S FP2189-PCB2140S FP2189 FP2189-PCB900S
OCR Text ...a high performance 1-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB ...
Description high performance 1-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount 高性能1瓦异质结场效应晶体管(异质结场效应管)在低成本的SOT - 89表面贴装
high performance 1-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount

File Size 427.01K  /  6 Page

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For heterostructure Found Datasheets File :: 131    Search Time::1.656ms    
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