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For f-die Found Datasheets File :: 38197 Search Time::1.813ms
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				International Rectifier
Part No.	IRF1407
OCR Text	... 3 IRF1407 100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 15 ID = 78A 12 V DS = 60V V DS = 37V V DS = 15V C, Capacitance(pF) Ciss VGS, Gate-to-Source Voltage (V) 1000...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	...0V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 22A 1 0.13 0.077 0.125 2 9.1 25 250 100 -100 1660 550 120 4 V ...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	...0V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 27A 1 0.13 0.070 0.081 2 9 25 250 100 -100 3700 1100 200 4 V /...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	... IRF1607 12000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd ID = 85A VDS = 60V VDS = 37V VDS = 15V 10000 VGS , Gate-to-Source Voltage (V) 16 Ciss Coss = C + C ds gd C, Capacitance(pF) 8000...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...urce Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 100A 16 VDS = 32V VDS = 20V C, Capacitance (pF) 8000 Ciss 12 6000 8 4000 C oss 2000 4 ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...IS = 2.5A, VGS = 0V TJ = 25C, I F = 2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. ...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... 3 IRF2204 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 12 I D = 130A VDS = 32V VDS = 20V 10 10000 Ciss Coss 1000 VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 8 ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) MIN - TYP 600 180 52 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Therma Resistance Junction to Case Therma Resistance Junctio...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...0V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 13.9A 1 0.29 0.180 0.250 2 6.1 25 250 100 -100 1300 400 130 4 ...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS G LS S 12.5 - nH Junction to Case Junction to Ambient RJC RJA Free Ai...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

For f-die Found Datasheets File :: 38197 Search Time::1.813ms
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