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  collector-emitter voltage vceo Datasheet PDF File

For collector-emitter voltage vceo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    FMBT1815

First Components International
Part No. FMBT1815
Description NPN Epitaxial Planar Transistor Collector - Emitter voltage vceo

File Size 65.07K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SD814A
Description High collector-emitter voltage vceo Low noise voltage NV

File Size 96.03K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SB1220
Description High collector-emitter voltage vceo Low noise voltage NV

File Size 67.92K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SD1821
Description High collector-emitter voltage vceo Low noise voltage NV

File Size 124.79K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SB800
Description World standard miniature package:SOT-89 High collector to emitter voltage:vceo -80V

File Size 73.33K  /  1 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SJ621 2SJ621-T2B 2SJ621-T1B
Description RF Bipolar Transistor; Collector Emitter voltage, vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET

File Size 71.11K  /  8 Page

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    HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B
Description RF Bipolar Transistor; Collector Emitter voltage, vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE

File Size 108.88K  /  8 Page

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    74HC HCMOS 74HCT 74HCU

Philips Semiconductors
NXP Semiconductors
Part No. 74HC HCMOS 74HCT 74HCU
Description : Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter voltage, vceo:100V; Transistor Polarity:N Channel; C-E Breakdown voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base voltage:120V
HCMOS family characteristics

File Size 91.62K  /  19 Page

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    HDMP-1014 HDMP-1012

Agilent(Hewlett-Packard)
Part No. HDMP-1014 HDMP-1012
Description Bipolar Transistor; Collector Emitter voltage, vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片

File Size 301.59K  /  42 Page

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    TY Semiconductor Co., Ltd
Part No. 2SB1643
Description High collector to emitter vceo. High collector power dissipation PC.

File Size 61.04K  /  1 Page

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For collector-emitter voltage vceo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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