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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010B2 APT5010B2FLL APT5010LFLL
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| OCR Text |
...re addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along...089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
54.02K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JFLL
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| OCR Text |
...re addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along...089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
53.49K /
2 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
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| Part No. |
APT5010JLC
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| OCR Text |
.... Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS ...089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
34.93K /
2 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JLL
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| OCR Text |
...re addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along...089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
51.35K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JVFR
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| OCR Text |
...ive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 ...089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL Recognized" File No. E145592
5,262... |
| Description |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
73.63K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
Advanced Power Technology, Ltd.
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| Part No. |
APT5010JVR
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| OCR Text |
...ive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750...089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL Recognized" File No. E145592
5,262... |
| Description |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
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| File Size |
71.26K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
Advanced Power Technology Ltd.
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| Part No. |
APT5010LLC APT5010B2LC APT5010B2LC-06
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| OCR Text |
.... Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS ...089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
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| File Size |
64.96K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| Part No. |
APT5010LVFR APT20M22LVFR
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| OCR Text |
...ive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 ...089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
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| File Size |
66.12K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5010LVR
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| OCR Text |
...ive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the r...089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
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| File Size |
64.27K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT5012 APT5012WVR
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| OCR Text |
...ive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the r...089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS V 500V 40A 0.120 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
61.40K /
4 Page |
View
it Online |
Download Datasheet |
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